標題: 2-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAAS
作者: CHENG, TM
CHANG, CY
CHIN, A
HUANG, MF
HUANG, JH
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 9-May-1994
摘要: Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600-900-degrees-C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications.
URI: http://dx.doi.org/10.1063/1.111559
http://hdl.handle.net/11536/2493
ISSN: 0003-6951
DOI: 10.1063/1.111559
期刊: APPLIED PHYSICS LETTERS
Volume: 64
Issue: 19
起始頁: 2517
結束頁: 2519
Appears in Collections:Articles