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dc.contributor.authorCHENG, TMen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorCHIN, Aen_US
dc.contributor.authorHUANG, MFen_US
dc.contributor.authorHUANG, JHen_US
dc.date.accessioned2014-12-08T15:03:59Z-
dc.date.available2014-12-08T15:03:59Z-
dc.date.issued1994-05-09en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.111559en_US
dc.identifier.urihttp://hdl.handle.net/11536/2493-
dc.description.abstractLow temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600-900-degrees-C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications.en_US
dc.language.isoen_USen_US
dc.title2-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAASen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.111559en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume64en_US
dc.citation.issue19en_US
dc.citation.spage2517en_US
dc.citation.epage2519en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994NK25800017-
dc.citation.woscount34-
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