完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | CHENG, TM | en_US |
dc.contributor.author | CHANG, CY | en_US |
dc.contributor.author | CHIN, A | en_US |
dc.contributor.author | HUANG, MF | en_US |
dc.contributor.author | HUANG, JH | en_US |
dc.date.accessioned | 2014-12-08T15:03:59Z | - |
dc.date.available | 2014-12-08T15:03:59Z | - |
dc.date.issued | 1994-05-09 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.111559 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2493 | - |
dc.description.abstract | Low temperature (LT) GaAs delta doped with In and Al have been grown by molecular beam epitaxy and annealed at 600-900-degrees-C for 10 min. As precipitates have been observed to form preferentially on In doping planes while depleting on the Al planes. Similar As precipitates in In-doped LT-Al0.25Ga0.75As are 50% more efficient than that of GaAs. The accumulation or depletion of As precipitates in two-dimensional planes in LT materials using isoelectronic impurities show that the phenomena is not directly related to the electronic properties of dopant impurities and therefore has many device applications. | en_US |
dc.language.iso | en_US | en_US |
dc.title | 2-DIMENSIONAL ARSENIC PRECIPITATION BY IN DELTA-DOPING DURING LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY GROWTH OF GAAS OR ALGAAS | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.111559 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 64 | en_US |
dc.citation.issue | 19 | en_US |
dc.citation.spage | 2517 | en_US |
dc.citation.epage | 2519 | en_US |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:A1994NK25800017 | - |
dc.citation.woscount | 34 | - |
顯示於類別: | 期刊論文 |