Browsing by Author "Horng, K. Y."

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Improved RF Power Performance in a 0.18-mu m MOSFET Which Uses an Asymmetric Drain Design
(2008-12-01)
Chang, T.
;
Kao, H. L.
;
McAlister, S. P.
;
Horng, K. Y.
;
Chin, Albert
We have fabricated 0.18-mu m asymmetric MOSFETs using a foundry-standard 1P6M process, without making any process modifications. In comparison with a conventional 0.18-mu m MOSFET, the asymmetric MOSFET design leads to a 64% improvement in the saturated output power and 8 dB better adjacent channel power ratio. The improvement in the RF power E performance of these MOS transistors suggests that they should be suitable for medium power amplifiers.
Radio Frequency Power Performance Enhancement for Asymmetric Lightly Doped Drain Metal-Oxide-Semiconductor Field-Effect Transistors on SiC Substrate
(2010)
Chang, Tsu
;
Kao, Hsuan-ling
;
Liu, S. L.
;
Deng, Joseph D. S.
;
Horng, K. Y.
In this paper we report the DC characteristics and radio frequency (RF) power performance improvement as high as 6.6% of asymmetric lightly doped drain metal-oxide-semiconductor field-effect transistors (asymmetric LDD MOSFET, AMOSFET) with 50-mu m-thick silicon substrates on SiC substrates. The self-heating and parasitic effects of large size AMOSFETs with 50-mu m-thick silicon on SiC substrates are reduced owing to good heat dissipation and less lossy behaviors of thinned silicon substrates and SiC substrates. Therefore, the power gain, saturation output power, and power added efficiency of AMOSFETs with 50-mu m-thick Si substrates mounted on SiC substrates is improved. (C) 2010 The Japan Society of Applied Physics