Browsing by Author "Hsu"

Now showing 1 - 13 of 13

Display
(2010-05-25)
Fan
;
Shih-Kang
;
Chiu
;
Cheng-Pu
;
Hsu
A display includes a first substrate, a first electrode, a second substrate, a second electrode and a display material layer. The first electrode is disposed on the first substrate and the second electrode is disposed on the second substrate. The display material layer is disposed between the first electrode and the second electrode. The display material layer of the invented display includes a solution and a plurality of first micro beads, wherein each of the first micro beads further has a plurality of different axis lengths in different axis directions, and the axis length in at least an axis direction is different from the axis lengths in the rest axis directions so that the first micro beads present different arrangement densities in different driving frequencies under the influence of polarized self-arrangement effect.
Double-triggered silicon controlling rectifier and electrostatic discharge protection circuit thereof
(2006-07-04)
Ker
;
Ming-Dou
;
Hsu
;
Kuo-Chun
A double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.
Electrostatic discharge protection circuit using a double-triggered silicon controlling rectifier
(2008-10-14)
Ker
;
Ming-Dou
;
Hsu
;
Kuo-Chun
An ESD protection circuit using a double-triggered silicon controller rectifier (SCR). The double-triggered silicon controller rectifier (SCR) includes N+ diffusion areas, P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.
Method and apparatus for switching data in communication system
(2010-05-25)
Lee
;
Chen-Yi
;
Liu
;
Chih-Hao
;
Lin
A method and apparatus for switching data in communication system which comprises of mainly a conversion circuit to receive source data possessing real coding dimension and covert it to converted data possessing tolerable coding dimension; judgment bit is set in the converted data to designate the data as source data or not. Later on, shift circuit is used to shift the converted data in certain amount so as to generate a shifted data; meanwhile, the lowest bit and highest bit of shifted data are used to start acquiring real coding dimension to be used respectively as a first data and a second data, or by changing the pattern of acquiring the first data, then the highest bit minus the real coding dimension bit as the starting bit of the first data, and acquiring the real coding dimension from the side of the lowest bit. Finally, a comparison and selection circuit is used to compare the corresponding judgment bit in the first and the second data and to output an output data, wherein output data is source data with the above-mentioned amount of shift.
Method and apparatus for switching data in communication system
(2010-05-25)
Lee
;
Chen-Yi
;
Lu
;
Jr-Hau
;
Lin
A method and apparatus for switching data in communication system which comprises of mainly a conversion circuit to receive the source data possessing in a real coding dimension and covert it to converted the data possessing in a tolerable coding dimension; the judgment bits are set in the converted data to designate the data as source data or not. Later on, shifter circuit is used to shift the converted data in certain amount and generates a shifted data; meanwhile, the right side and left side of shifted data are used to start acquiring the real coding dimension to be used respectively as a first data and a second data. Finally, a comparison and selection circuit is used to compare the corresponding judgment bits in the first and the second data and to output an output data, wherein output data is source data with the above-mentioned amount of shift.
Method for manufacturing a combined solid immersion lens (SIL) and submicron aperture, and device thereof
(2004-10-26)
Hsu
;
Wensyang
;
Chou
;
Hsueh Liang
;
Tien
The invention relates to an integrated method for manufacturing a combined solid immersion lens (SIL) and submicron aperture, and device thereof, comprising depositing a sacrificial layer on a substrate, coating a photoresist on the sacrificial layer and using photo-lithography to form an aperture on the photoresist, applying reflow and etching process to remove the sacrificial layer below the aperture, depositing a conductive material on the photoresist and performing electroplating to reduce the aperture size, then coating another photoresist and using photo-lithography to form a cylindrical phtoresist above the aperture, applying a high temperature thermal reflow to form a microlens, and finally removing the substrate to obtain an optical read/write apparatus with a combined solid immersion lens (SIL) and submicron aperture.
Method for modulating refractive indices of optical fiber gratings
(2009-09-22)
Hsu
;
Kuei Chu
;
Lai
;
Yin Chieh
The present invention proposes a method for modulating refractive indices of optical fiber gratings, wherein the UV exposure on a least one assigned location of an optical fiber grating is divided into to two UV shots, and the intensities or phases of the two UV shots, which expose the location sequentially, are controlled to make the total exposure intensity of one assigned location maintained at a fixed value, whereby the interference fringes, which are created by a superposition of the two UV shots, have fixed phases and adjustable intensities, and whereby the dc index of the optical fiber grating maintains fixed and the ac index independently adjustable.
Method for sequentially writing fiber Bragg grating by using real-time side-diffraction optical fiber position monitoring
(2008-06-03)
Hsu
;
Kuei-Chu
;
Sheu
;
Lih-Gen
;
Chuang
The present invention provides a fiber Bragg Grating sequential writing method with real-time optical fiber position monitoring, characterized in that the relative phase between a fiber grating and a writing interference beam at each positioning point is determined by an interferometric side-diffraction method, and writing is sequentially performed. Accuracy in fabricating a long and complex fiber grating structure can be increased by decreasing or avoiding accumulative errors caused by long-term scan of monitoring optical fiber position, or by a means for fabricating a wanted reference fiber Bragg grating with similar settings.
Microelectro mechanical system for magneto-optic data storage apparatus
(2006-02-21)
Hsu
;
Wensyang
;
Shieh
;
Han-Ping
;
Sun
The present invention relates to a Microelectro mechanical system structure. More specifically the invention relates to utilize a sacrificial layer to fabricate an air bearing structure, followed by forming an aperture, and reducing the aperture to nano-scale by electroplating. And then, by using of two thick film photoresist films for twice electroplating fabrication, for fabricate metal microcoils having high aspect ratio structure and interconnection metal line, to achieve efficiencies of utilizing area and reducing resistance. Moreover, proceed lithography depends on different portions and exposure dose. Then form a single photoresist film to have a specific dimension and thickness structure, finally, by using reflow process, forming a magneto-optic (MO) pickup head comprises of Supersphere Solid Immersion Lens (SSIL), nano-aperture, microcoils and air bearing by using an integrated fabrication, with advantages such as no high cost device and precise apparatus are required in the process of fabrication, mass production in batch fabrication, without step of assembly, for high-density data storage and rewritable record.
Multi-mode multi-parallelism data exchange method and device thereof
(2010-05-18)
Liu
;
Chih-Hao
;
Lin
;
Chien-Ching
;
Lee
A multi-mode multi-parallelism data exchange method and the device thereof are proposed to apply to a check node operator or a bit node operator. The proposed method comprises the steps of: duplicating part or all of an original shift data as a duplicated shift data; combining the original shift data and the duplicated shift data to form a data block; and using a data block as the unit to shift this data block so as to conveniently retrieve shift data from the shifted data block. With a maximum z factor circuit and duplication of part of data, specifications of different shift sizes can be supported. The functions of shifters of several sizes can therefore be accomplished with the minimum complexity.
Nonvolatile memory device with nanowire channel and method for fabricating the same
(2010-05-25)
Lin
;
Horng-Chih
;
Su
;
Chun-Jung
;
Hsu
A nonvolatile memory device with nanowire channel and a method for fabricating the same are proposed, in which side etching is used to shrink side walls of a side-gate to form a nanowire pattern, thereby fabricating a nanowire channel on the dielectric of the side walls of the side-gate. A nonvolatile memory device with nanowire channel and dual-gate control can thus be achieved. This nonvolatile memory device can enhance data writing and erasing efficiency, and also has the capability of low voltage operation. Moreover, through a process of low cost and easy steps, highly reproducible and mass producible fabrication of nanowire devices can be accomplished.
Process for fabricating supersphere solid immersion lens
(2006-08-01)
Hsu
;
Wensyang
;
Sun
;
Yi-Ting
The present invention relates to process for fabricating supersphere solid immersion lens (SSIL). The procedure of the present invention comprises the steps of: firstly, coating a positive photoresist layer on a substrate, followed by first exposure and second exposure with different exposure dose separately by first mask and second mask to form the positive photoresist structure with different dimensions and depths. The first exposure dose is supplied enough to make sure the patterns of the first mask can be observed on the positive photoresist layer during the alignment of the second exposure process. And the following reflow process forms a supersphere solid immersion lens (SSIL) structure.
Self-alignment manufacturing method of the microlens and the aperture using in optical devices
(2007-08-21)
Chiu
;
Yi
;
Hsu
;
Wen Syang
;
Chang
The present invention discloses a self-alignment manufacturing method of a microlens and an aperture using in an optical device. The method manufactures the aperture and the circular opening in the opaque film on a transparent substrate, and utilizes the self-alignment backside exposure technology to precisely integrate the aperture and the microlens made by macromolecule material without any combination step. The claimed method is simpler than conventional technology and can precisely align and integrate the microlens and the aperture with a continuous batch manufacture. Since the aperture and the circular opening are concentric circles and formed in same step, the microlens and the aperture can be precisely aligned with the backside exposure. The claimed invention can effectively improve the optical resolution and efficiency of the optical access and measurement devices.