Browsing by Author "Hsu, C.-H."

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Fabrication and X-ray absorption NaxCoO2 spectroscopy in layered cobaltate thin films
(2007-03-01)
Chang, W. J.
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Lin, J.-Y.
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Chung, T. Y.
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Chen, J. M.
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Hsu, C.-H.
NaxCoO2 (x similar to 0.68) thin films were fabricated on sapphire (0 0 0 1) substrates via the lateral diffusion of sodium into Co3O4 (1 1 1) films, which were grown by pulsed-laser deposition. From the results of X-ray diffraction and in-plane resistivity rho(ab), the single phase and the metallic behaviors of these NaxCoO2 films can be identified. For the same sodium content x, rho(ab) is consistent with that of single crystals. In addition, the O 1s X-ray absorption near edge spectra of thin films are measured and compared with those of single crystals. (c) 2006 Elsevier B.V. All rights reserved.
Optimum power-saving method for power MOSFET width of DC-DC converters
(2007-02-01)
Chen, K.-H.
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Chien, C.-C.
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Hsu, C.-H.
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Huang, L.-R.
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電控工程研究所
An optimum power metal-oxide-semiconductor field effect transistor (MOSFET) width technique is proposed for enhancing the efficiency characteristics of switching DC-DC converters. By implementing a one-cycle buck DC-DC converter, it is demonstrated that the dynamic power MOSFET width controlling technique has a much improved power reduction whether the load current is light or heavy. The maximum efficiency of the buck converter is similar to 92% with a 3% efficiency improvement for the heavy load condition. The efficiency is further improved by similar to 16% for the light load condition as a result of the power reduction from the large power MOSFET transistors. Also proposed is a new error-correction loop circuit to enable a better load regulation than that of previous designs. Compared with the adaptive gate driver voltage technique, the optimum power MOSFET width can achieve a significant improvement in power saving. It is also superior to the low-voltage-swing MOSFET gate drive technique for switching DC-DC converters.
Orbital ordering of layered manganites from resonant soft X-ray scattering
(2007-03-01)
Chao, K. S.
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Huang, D. J.
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Okamoto, J.
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Lin, H.-J.
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Hsu, C.-H.
We present measurements of Mn L-edge resonant soft X-ray scattering on single-layered manganites with different sizes of cations. Orbital ordering of Pr0.5Ca1.5MnO4 exhibits a stronger three-dimensional character and a dramatically enhanced transition temperature, as compared with those of La0.5Sr1.5MnO4. The c-axis correlation length of orbital ordering in Pr0.5Ca1.5MnO4 is about half of the inplane correlation length. Our results indicate that reduction in one-electron bandwidth and quenched disorder strongly enhances the stabilization of charge-orbital ordering. (c) 2006 Published by Elsevier B. V.
Orbital polarization and Jahn-Teller distortion of strained La0.5Sr0.5MnO3 thin films
(2007-03-01)
Wu, W. B.
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Huang, D. J.
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Huang, C.-M.
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Hsu, C.-H.
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Chang, C. F.
We report spectroscopic evidence for orbital-mediated phases in strained La0.5Sr0.5MnO3 thin films by combining soft X-ray spectroscopy and synthesis of manganite thin films. Measurements of polarization-dependent soft X-ray absorption reveal that electronic states responsible for the lowest-energy excitations in C-type antiferromagnetic La0.5Sr0.5MnO3 films have an orbital symmetry of 3z(2) - r(2), while those in A-type AFM. films have an orbital symmetry of x(2)-y(2). Such orbital polarizations in strained films of manganite result from a combined effect of the Jahn-Teller distortion and the electron correlations of Mn 3d electrons. (c) 2006 Published by Elsevier B.V.
Threading dislocations in domain-matching epitaxial films of ZnO
(2007-10-01)
Liu, W.-R.
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Hsieh, W. F.
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Hsu, C.-H.
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Liang, Keng S.
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Chien, F. S. -S.
The structures of high-quality ZnO epitaxial films grown by pulsed-laser deposition on sapphire ( 0001) without an oxygen gas flow were investigated by X-ray diffraction and transmission electron microscopy. The great disparity of X-ray diffraction line widths between the normal and in-plane reflections reveals the specific threading dislocation geometry of ZnO. Most threading dislocations are pure edge dislocations. From a combination of scattering and microscopic results, it is found that threading dislocations are not uniformly distributed in the ZnO films, but the films consist of columnar epitaxial cores surrounded by annular regions of edge threading dislocations in large density. The local surface morphology and capacitance signal obtained from atomic force and scanning capacitance microscopes indicate that the aggregation of threading dislocations leads to high interface traps at the annular regions.