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Browsing by Author "Hsu, Hung-Ru"

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    POST SULFURIZATION EFFECT ON THE MOS2 GROWN BY PULSED LASER DEPOSITION
    (2016)
    Ho, Yen-Teng
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    Yen, Tzu-Chun
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    Luong, Tien-Tung
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    Wei, Lin-Lung
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    Tu, Yung-Yi
    Two inches size with high quality layered growth of MoS2 was achieved by PLD on c-plane sapphire substrate. 2-3 monolayer MoS2 was obtained within 2 inches wafer estimated from Raman analysis and confirmed by cross-sectional view of TEM. Additionally, the oxide states of Mo 3d core level spectra of MoS2, analyzed by XPS, can be effectively reduced by adopting a post sulfurization process in H2S. The post process also improve the photoluminescence (PL) of MoS2 as well as the electrical characteristic of MoS2 FET due to elimination the Mo oxide in the grown film.
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    Reliable Doping Technique for WSe2 by W: Ta Co-Sputtering Process
    (2016)
    Chien, Po-Yen
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    Zhang, Ming
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    Huang, Shao-Chia
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    Lee, Min-Hung
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    Hsu, Hung-Ru
    The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6x10(13)cm(-2)) and good effective hole mobility (16.5cm(2)/Vs) were realized. As a result, low sheet resistance (17k Omega/sq) and contact resistance with Pd metal (11.4k Omega-mu m) were measured using TLM structures.
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    Synthesis of Wafer-Scale WSe2 by WOx Selenization on SiO2 / Si Substrates
    (2016)
    Chu, Yung-Ching
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    Jong, Chao-An
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    Ho, Yen-Teng
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    Zhang, Ming
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    Chien, Po-Yen
    Scalable synthesis of thin tungsten diselenide (WSe2) films on 4-inch silicon substrate with 80 nm silicon dioxide (SiO2) is demonstrated. Cross-sectional transmission electron microscopy (TEM) reveals good control of WSe2 layers. Raman spectroscopy confirms high quality crystal of WSe2 is achieved. Back-gated field-effect transistors (FETs) fabricated on these thin films exhibit p-channel characteristics with a good on/off current ratio larger than 1.2 x 10(2).
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    WAFER SIZE MOS2 WITH FEW MONOLAYER SYNTHESIZED BY H2S SULFURIZATION
    (2017-01-01)
    Ho, Yen-Teng
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    Chu, Yung-Ching
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    Wei, Lin-Lung
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    Luong, Tien-Tung
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    Lin, Chih-Chien
    Wafer sized, high quality continuous fihns would be a key demand for MoS2 implemented in circuit application. In this study, the growth of few monolayer Mo-S2 on 4 inches SiO2/Si substrate were demonstrated. The MoS2 thin films were synthesized by sulfurized in a furnace from the ultra-thin MoO3 starting materials by using H2S. The obtained MoS2 thin film examined by Raman analysis and Photoluminescence (PL), shows the semiconductor nature with direct transition peaks of 1.86 eV and 1.99 eV. The 4 5 monolayer of MoS2 with thickness around 2.6 nm is confirmed by cross-sectional view of transmission electron microscopy (TEM). Additionally, the DC characteristics of MoS2 MOSFETs exhibit at least 2 order in on/off current ratio, demonstrating the feasibility for circuit application.