Browsing by Author "Hsu, T. -H."

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Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
(2010-09-02)
Chang, C. -T.
;
Hsu, T. -H.
;
Chang, E. Y.
;
Chen, Y. -C.
;
Trinh, H. -D.
Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved by using an 16 nm-thick Al(2)O(3) gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm, which are comparable to the conventional normally-on devices.