Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage

Abstract

Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved by using an 16 nm-thick Al(2)O(3) gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm, which are comparable to the conventional normally-on devices.