Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
| dc.citation.epage | U63 | en_US |
| dc.citation.issue | 18 | en_US |
| dc.citation.spage | 1280 | en_US |
| dc.citation.volume | 46 | en_US |
| dc.citation.woscount | 16 | |
| dc.contributor.author | Chang, C. -T. | en_US |
| dc.contributor.author | Hsu, T. -H. | en_US |
| dc.contributor.author | Chang, E. Y. | en_US |
| dc.contributor.author | Chen, Y. -C. | en_US |
| dc.contributor.author | Trinh, H. -D. | en_US |
| dc.contributor.author | Chen, K. J. | en_US |
| dc.contributor.department | 材料科學與工程學系 | zh_TW |
| dc.contributor.department | Department of Materials Science and Engineering | en_US |
| dc.date.accessioned | 2014-12-08T15:48:19Z | |
| dc.date.available | 2014-12-08T15:48:19Z | |
| dc.date.issued | 2010-09-02 | en_US |
| dc.description.abstract | Normally-off operation AlGaN/GaN high electron mobility transistors have been developed utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor gate architecture. Threshold voltage as high as 5.1 V was achieved by using an 16 nm-thick Al(2)O(3) gate oxide film. Additionally, the device performed a drain current density of 500 mA/mm and a peak transconductance of 100 mS/mm, which are comparable to the conventional normally-on devices. | en_US |
| dc.identifier.doi | 10.1049/el.2010.1939 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el.2010.1939 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/32202 | |
| dc.identifier.wosnumber | WOS:000281693800025 | |
| dc.language.iso | en_US | en_US |
| dc.title | Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage | en_US |
| dc.type | Article | en_US |