Browsing by Author "Hu, JC"

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Characterization of multilayered Ti/TiN films grown by chemical vapor deposition
(1998-11-02)
Hu, JC
;
Chang, TC
;
Chen, LJ
;
Yang, YL
;
Chang, CY
The resistivity of multilayered Ti/TiN films grown by chemical vapor deposition can be reduced from 240 mu Omega cm (standard sample) to 120 mu Omega cm with NH3 plasma post-treatment for 300 s. Increasing the number of multilayered Ti/TiN mu ms of reduced thickness and a plasma post-treatment technique contributed to reducing the resistivity of TiN films effectively. Smooth multilayered Ti/TiN films were observed by XTEM image. The content of chlorine in the multilayered Ti/TiN film was 1.6 at.%. Therefore, corrosion in the subsequent Al film should be minimized. SIMS depth profiles of the multilayered Ti/TiN sample showed that Ti atom distribution is fairly uniform. The result is in agreement with the observation of XTEM and the measurement of AES depth profiles. The resistivity of multlayered Ti/TiN films can be further reduced to 75 mu Omega cm with an in situ NH3 plasma post-treatment (500 W) for 300 s followed by RTA at 900 degrees C for 60 s. Therefore, low resistivity (<100 mu Omega cm) and low Cl concentration (<2 at.%) CVD TiN films can be achieved by a combination of forming a multilayered Ti/TiN structure, and using NH3 plasma post-treatment and RTA. (C) 1998 Elsevier Science S.A. All rights reserved.
Characterization of TiN film grown by low-pressure-chemical-vapor-deposition
(1997-10-31)
Mei, YJ
;
Chang, TC
;
Hu, JC
;
Chen, LJ
;
Yang, YL
Conformal TiN films were deposited by thermal low-pressure-chemical-vapor-deposition (LPCVD) in a rotating disk reactor, using TiCl4 and NH3 with N-2 as a dilution gas. TiN plug with 0.05 mu m contact size was achieved. No void formation was observed in the TiN plug. The result demonstrated that LPCVD-TiN can be used to fill very small contact holes. The excellent step coverage and uniformity resulted from a surface-reaction-rate-limited deposition. The resistivity of TiN film was reduced to 133 mu Omega cm by in-situ NH3 plasma post-treatment. The concentration of chlorine in the TiN him was measured to be less than 2 atomic % (at.%) by Auger electron spectroscope measurement. For Al deposited on TiN, the Al orientation was found to be dependent on the deposition method of Al film, but not on the underlying TiN orientation. (C) 1997 Elsevier Science S.A.
Copper electroplating for future ultralarge scale integration interconnection
(2000-03-01)
Gau, WC
;
Chang, TC
;
Lin, YS
;
Hu, JC
;
Chen, LJ
Copper has received considerable attention during the past few years because of its low electrical resistivity, high melting temperature, and high electromigration resistance. Since electrochemical plating has several advantages compared to physical vapor deposition and chemical vapor deposition due to its low cost and low processing temperature, it becomes the most attractive technique for the implementation of Cu metallization. In this article, we report an electroplating scheme for Cu deposition and study aspects of copper electroplating related to chemical additives effected on Cu deposition. A low resistivity Cu him (similar to 2 mu Omega cm) could be obtained when metallic ion concentration is decreased or current density is increased. The detailed correlation between film resistivity, electrolyte concentration, current density, and film morphology is given in this study. In addition, chemical additives in electrolyte solutions also play important roles in copper electroplating. In this report, thiourea and polyethylene glycol, which are usually added in printing circuit board electroplating to influence nucleation, have been used as gap filling promoters to help Cu filling. The results show that addition of thiourea and polyethylene glycol could help in forming smooth Cu film but does not promote Cu filling ability. Hydroxyl amine sulfate, which has both amino and sulfate groups, is proposed for use as a gap filling promoter in helping Cu electroplating. In this work, we demonstrate that Cu could be electroplated into fine trenches (at 0.3 mu m dimension with aspect ratio of 3) when hydroxyl amine sulfate is present and no voids are formed. (C) 2000 American Vacuum Society. [S0734-2101 (00)07602-8].
Copper electroplating for future ultralarge scale integration interconnection (vol 18, pg 656, 2000)
(2000-09-01)
Gau, WC
;
Chang, TC
;
Lin, YS
;
Hu, JC
;
Chen, LJ
Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications
(2000-07-01)
Hu, JC
;
Chang, TC
;
Wu, CW
;
Chen, LJ
;
Hsiung, CS
Effects of a new combination of additives in acid electroplating solution on the properties of Cu thin films have been investigated, The electroplated Cu films exhibit an excellent superfilling behavior. 0.18 mu m vias with an aspect ratio exceeding 5 were filled completely without any void or seam. Strong (111) texture was found for the electroplated Cu films. The resistivity of a 450-nm-thick Cu film was measured to be 1.84 mu Omega cm. (C) 2000 American Vacuum Society. [S0734-2101(00)08004-0].
Enhancement of barrier properties in chemical vapor deposited TiN employing multi-stacked Ti/TiN structure
(2000-02-01)
Chang, TC
;
Liu, PT
;
Yang, YL
;
Hu, JC
;
Sze, SM
A novel multi-stacked Ti/TiN structure was proposed to enhance the barrier properties of chemical vapor deposited TiN film. Both the chlorine content and the resistivity of the multi-stacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited (CVD) TiN film with the same thickness. Secondary ion mass spectrometry (SIMS) data showed that Ti atom distribution is fairly uniform to fill the grain boundary of TiN film. Therefore, the leakage current resulted from junction spiking was further reduced by the grain boundary effects when employing multi-stacked Ti/TiN as diffusion barrier layer instead of a single layer of TiN film.
Investigation on multilayered chemical vapor deposited Ti TiN films as the diffusion barriers in Cu and Al metallization
(1999-07-01)
Hu, JC
;
Chang, TC
;
Chen, LJ
;
Yang, YL
;
Chen, SY
A novel multilayered chemical vapor deposition (CVD) Ti/TiN structure was found to be a more effective diffusion barrier in Cu metallization than TIN alone. The Ti and TIN films were deposited by plasma enhanced CVD and low pressure CVD, respectively. In order to reduce the concentration of chlorine in the films, NH3 plasma posttreatment was applied to multilayered CVD-Ti/TiN films. The resistivity of the film was reduced from 240 to 120 mu Omega cm using NH3 plasma posttreatment. Cu was electroplated on the multilayered CVD-Ti/TiN films. X-ray diffraction patterns showed a small (002) peak and strong (111) peak from the Cu film. The leakage current was kept low during the device application test indicating the Ti/TiN film possessed an enhanced barrier property over the TiN film alone. (C) 1999 American Vacuum Sotiety. [S0734-2101(99)12004-9].
Large earthquake-triggered landslides and mountain belt erosion: The Tsaoling case, Taiwan
(2005-09-01)
Chen, RF
;
Chan, YC
;
Angelier, J
;
Hu, JC
;
Huang, C
The 1999 Chi-Chi earthquake triggered the catastrophic Tsaoling landslide in central Taiwan. We mapped the landslide area and estimated the landslide volume, using high-resolution digital elevation model from airborne LiDAR (Light Detection and Ranging), satellite images, aerial photographs and topographic maps. The comparison between cut and fill volumes, about 0.126 and 0.150 km(3), respectively, suggests a volume increase of 19% due to decompaction during landsliding. In April 2002, the cut and fill volumes were about 0.137 and 0.116 km(3), respectively. These estimates suggest that 2.5 years after the event, the volume of landslide debris removed by river erosion was nearly 0.045 km(3). Such a large value highlights the importance of landslide processes for erosion and long-term denudation in the Taiwan mountain belt.
Reliability of multistacked chemical vapor deposited Ti/TiN structure as the diffusion barrier in ultralarge scale integrated metallization
(2000-01-01)
Liu, PT
;
Chang, TC
;
Hu, JC
;
Yang, YL
;
Sze, SM
The reliability of multistacked titanium/titanium nitride (Ti/TiN) films as a diffusion barrier has been investigated by electrical characteristic measurements and material analyses. Both thr chlorine content and the resistivity of the multistacked Ti/TiN films are significantly decreased when compared with a single layer of chemical vapor deposited-TiN film with the same thickness. The endurance of the diffusion barrier to thermal stress is enhanced by increasing the number of stacked layers of Ti/TiN films. Secondary, ion mass spectroscopy depth profiles of the multistacked Ti/TiN samples showed that Ti atom distribution is Fairly uniform in Filling the grain boundary of the TiN film. The result is consistent with the observation of X-ray transmission microscopy. Therefore, the leakage current resulting from junction spiking is Further reduced by the grain boundary effects when employing multistacked Ti/TiN as the diffusion barrier layer instead of a single layer of TiN film. (C) 2000 The Electrochemical Society. S0013-4651(99)10-006-5. All rights reserved.