Browsing by Author "Hu, Shao-Yu"

Now showing 1 - 7 of 7

A Novel Synthesis of a CuInSe2 Thin Film from Electrodeposited Cu-Se-In-Se Precursors with Three Steps Annealing
(2012-09-01)
Hu, Shao-Yu
;
Lee, Wen-Hsi
;
Chang, Shih-Chieh
;
Wang, Ying-Lang
;
照明與能源光電研究所
In this study, copper indium diselenide (CIS) films were synthesized from electrodeposited Cu-Se In Se precursors by three step annealing. The Se layer between Cu and In layer was grown to prevent the formation of Cu/In compound. The Cu Se precursors were first annealed to grow uniform and conductive Cu2Se surface. After deposition of the four layers precursors, two steps annealing was employed to form Cu2Se-In2Se3 precursors. Transforming Cu2Se-In2Se3 to CIS required less thermal energy. Therefore, high quality CIS film can be synthesized by two steps annealing due to its high crystallinity. The properties of the CIS films were characterized by scanning electron microscopy (SEM), X-ray Diffraction (XRD), and Raman Spectra.
A Study of Trimethylsilane (3MS) and Tetramethylsilane (4MS) Based alpha-SiCN:H/alpha-SiCO:H Diffusion Barrier Films
(2012-03-01)
Chen, Sheng-Wen
;
Wang, Yu-Sheng
;
Hu, Shao-Yu
;
Lee, Wen-Hsi
;
Chi, Chieh-Cheng
Amorphous nitrogen-doped silicon carbide (alpha-SiCN:H) films have been used as a Cu penetration diffusion barrier and interconnect etch stop layer in the below 90-nanometer ultra-large scale integration (ULSI) manufacturing technology. In this study, the etching stop layers were deposited by using trimethylsilane (3MS) or tetramethylsilane (4MS) with ammonia by plasma-enhanced chemical vapor deposition (PECVD) followed by a procedure for tetra-ethoxyl silane (TEOS) oxide. The depth profile of Cu distribution examined by second ion mass spectroscopy (SIMs) showed that 3MS alpha-SiCN:H exhibited a better barrier performance than the 4MS film, which was revealed by the Cu signal. The FTIR spectra also showed the intensity of Si-CH3 stretch mode in the alpha-SiCN:H film deposited by 3MS was higher than that deposited by 4MS. A novel multi structure of oxygen-doped silicon carbide (SiC:O) substituted TEOS oxide capped on 4MS alpha-SiC:N film was also examined. In addition to this, the new multi etch stop layers can be deposited together with the same tool which can thus eliminate the effect of the vacuum break and accompanying environmental contamination.
Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishing
(2008-01-01)
Hung, Chi-Cheng
;
Lee, Wen-Hsi
;
Hu, Shao-Yu
;
Chang, Shih-Chieh
;
Chen, Kei-Wei
In the semiconductor metallization process, the superior gap-fill capability of copper (Cu) electroplating is mainly due to external additives, such as bis-(3-sodiumsulfopropyl disulfide) (SPS), which is used as an accelerator. This study demonstrates that the byproducts of SPS induced Cu defects after a chemical-mechanical-polishing (CMP) process. In conventional cyclic-voltammetric-stripping analysis, the byproducts generated from organic additives are very difficult to quantify. In this study, the authors used mass-spectrum analysis to quantify SPS byproducts and found that the SPS byproduct, 1,3-propanedisulfonic acid, correlated with the formation of Cu defects because it influenced the properties of electroplated Cu films and the chemical corrosion rate, then induced defects after the CMP process. (C) 2008 American Vacuum Society.
Effect of Electrolyte Composition on Cu Stripping of Pt Contact Pins in Semiconductor Cu Electroplating Process
(2011-11-01)
Hu, Shao-Yu
;
Lee, Wen-Hsi
;
Chang, Shih-Chieh
;
Wang, Ying-Lang
;
照明與能源光電研究所
In Cu electroplating processes, the wet-contact pins are deposited with Cu films. The Pt contact pins should be stripped to remove extra Cu films to maintain contact quality and plating efficiency. However, the stripping behavior is affected by electrolyte composition. The proportion of copper sulphate and sulfuric acid changes the conductivity, pH, and cupric-ion concentration of the electrolyte solution. In this study, an electrochemistry analysis system is employed to characterize the behavior of the Pt stripping process in electrolytes having various electrolyte proportions. It was found that increasing the copper sulphate and sulfuric acid concentrations suppresses the Cu stripping current but enhances the water electrolysis reaction on the Pt surface. Copper sulphate decreased the rate of oxide dissolution and cupric diffusion. The dissolution rate was limited by denser cation layer. Sulfuric acid decreased the dissolubility of cupric ions and suppressed the electrode from releasing more cupric ions. There is no significant influence of additives such as leveler suppressor on the stripping. Minute quantity of HNO3 and H3PO4 were also added to the plating electrolyte. The additional acid HNO3 eliminated the inhibition form dense cupric layer and enhanced the stripping performance without changing the quality of the deposited films during the plating process.
Pulsed Electrodeposition of CuInSe(2) Thin Films onto Mo-Glass Substrates
(2011-01-01)
Hu, Shao-Yu
;
Lee, Wen-Hsi
;
Chang, Shih-Chieh
;
Cheng, Yi-Lung
;
Wang, Ying-Lang
In this study, copper indium selenide (CIS) films were deposited by pulsed electrodeposition with multi potentials to control the atomic ratio of the CIS film and improve the deposition uniformity. It was found that smaller duty cycle and pulsed period enhanced the cathodic current due to ion replenishment. The results show that the Cu/In ratio was significantly influenced by reverse voltage of pulsed electrodeposition. The uniformity of the CIS films can be improved by proper reverse voltage. The deposition rate did not decrease in direct proportion to the duty cycle because the plating current was enhanced by the pulse effect. The pulsed deposited CIS film with optimized composition show smaller grain size, smoother microstructure, and less secondary phase than constant deposited film. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3567762] All rights reserved.
Pulsed Electrodeposition of CuInSe2 Thin Films onto Mo-Glass Substrates
(2011-01-01)
Hu, Shao-Yu
;
Lee, Wen-Hsi
;
Chang, Shih-Chieh
;
Cheng, Yi-Lung
;
Wang, Ying-Lang
In this study, copper indium selenide (CIS) films were deposited by pulsed electrodeposition with multi potentials to control the atomic ratio of the CIS film and improve the deposition uniformity. It was found that smaller duty cycle and pulsed period enhanced the cathodic current due to ion replenishment. The results show that the Cu/In ratio was significantly influenced by reverse voltage of pulsed electrodeposition. The uniformity of the CIS films can be improved by proper reverse voltage. The deposition rate did not decrease in direct proportion to the duty cycle because the plating current was enhanced by the pulse effect. The pulsed deposited CIS film with optimized composition show smaller grain size, smoother microstructure, and less secondary phase than constant deposited film. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3567762] All rights reserved.
Reduced Junction Leakage by Hot Phosphorus Ion Implantation of NiGe-Contacted Germanium n(+)/p Shallow Junction
(2017-09-01)
Chen, Yi-Ju
;
Tsui, Bing-Yue
;
Chou, Hung-Ju
;
Li, Ching-I
;
Lin, Ger-Pin
Effects of hot phosphorus (P) implantation on the NiGe-contacted Ge n(+)/p junction are studied in this work. At an adequately high ion-implantation temperature (150 degrees C), the P depth profiles of the hot-implanted samples are similar to that of the room-temperature implanted ones. Hot P implantation is demonstrated effectively in reducing ion implantation induced defect formation and suppressing nickel atoms diffusion. Therefore, hot P implantation is efficient in lowering junction leakage and excellent junction characteristics exhibiting similar to 1 x 10(6) J(ON)/J(OFF) ratio is achieved.