Browsing by Author "Huang, CT"

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A new observation of the germanium outdiffusion effect on the hot carrier and NBTI reliabilities in sub-100nm technology strained-Si/SiGe CMOS devices
(2005)
Chung, SS
;
Liu, YR
;
Yeh, CF
;
Wu, SR
;
Lai, CS
In this paper, the evidence of SiGe layer induced trap generation and its correlation with enhanced degradation in strained-Si/SiGe CMOS devices have been reported for the first time. First, a new two-level charge pumping(CP) curve has been demonstrated to identify the Ge out-diffusion effect. Secondly, enhanced degradation in strained-Si devices has been clarified based on experimental results. Both n- and p-MOSFE's exhibit different extent of HC degradation effect. This is attributed to the difference in their mobility enhancement as well as additional traps coming from the Si/SiGe interface. Finally, temperature dependence of HC and NBTI has been examined for both strained-Si and bulk devices. Sophisticated measurement techniques, charge pumping and gated-diode (GD) measurements, have been employed to understand the generated interface traps. Results show that strained-Si device is less sensitive to the temperature and has a chance for better NBTI reliability if we have a good control of the strained-Si/SiGe interface, such as through low temperature gate oxide process or better S/D junction formation.
A novel leakage current separation technique in a direct Tunneling regime gate oxide SONOS memory cell
(2003)
Chung, SS
;
Chiang, PY
;
Chou, G
;
Huang, CT
;
Chen, P
In this paper, data retention for various top and bottom oxide (tunnel oxide) SONOS cells has been extensively investigated. For the first time, a leakage current separation technique has been developed to distinguish the two leakage current components via thermionic and direct tunneling (DT) in the ONO layer. Results show that the short-term leakage is dominated by the direct tunneling, while the long-term leakage is dominated by the thermionic emission. The direct tunneling through either tunnel or blocking oxide can also be identified experimentally. These results are useful toward an understanding of the scaling of SONOS cell with focus on its reliabilities.
A study of tilt angle effect on Halo PMOS performance
(1998-09-01)
Su, JG
;
Wong, SC
;
Huang, CT
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
The Halo structure is usually adopted in deep submicrometer MOS devices for punchthrough prevention. The tilt angle of the Halo implant determines the dopant distribution which induces anti-punchthrough operation. In this paper, we investigate the impact of the tilt angle on the Halo PMOS device performance via two-dimensional (2D) simulations. We find that the ratio of on-current to off-current is constant for all tilt angles of Halo implant, implying an equivalent DC performance for all tilt angles. The equivalence can be traced back to a self compensation between the body factor and source resistance. The result :implies that a low tilt angle should be adopted for Halo devices, for it gives a small threshold voltage and thus a high noise margin. The methodology used in analyzing body factor and source resistance can also be applied to analyze other devices. (C) 1998 Elsevier Science Ltd. All rights reserved.
Analysis of petroleum distillates from fire debris using supercritical fluid extraction with a two-level orthogonal array experimental design
(2002-08-01)
Huang, CT
;
Hsieh, YZ
;
應用化學系
;
Department of Applied Chemistry
A supercritical fluid extraction (SFE) method was developed in the present study as an effective sample pretreatment technique of petroleum distillates from fire debris. Three petroleum distillates were used as target analytes, including 95 unleaded gasoline, kerosene, and premium diesel. An orthogonal array (L16) experimental design was adopted to separately evaluate primary SFE experimental factors. The SFE efficiencies of petroleum distillates at various extraction conditions were examined and the optimized SFE conditions were identified. Experimental results demonstrated that the optimized SFE method not only provided an effective extraction method for the spiked sample, but also successfully recovered residues of petroleum distillates from fire debris.
Controlling the diffusion of implanted boron in Si and silicide by multiple implants
(1998-07-01)
Chu, CH
;
Ho, KJ
;
Huang, CT
;
Shvu, SH
;
Lei, TF
To form an ultra-shallow p(+)-n junction by direct low energy BF2+ implantation is difficult. The channeling of the baron during implant and the transient enhanced diffusion of boron during annealing prohibit the tight control of the boron profile. Using the germanium preamorphization implant, the channeling probability of the boron is suppressed. However, the thickness of the pre-amorphized layer is crucial in alleviating the transient enhanced diffusion of boron. The excess point defects below the original amorphous/crystalline interface play a key role in enhancing the diffusion of boron. Introducing the carbon into the BF2+ implanted Si, the diffusion of the boron is retarded, Combining with the germanium pre-amorphization implant, low energy BF2+ implant and carbon implant, an ultra-shallow p(+)-n junction with a junction depth of about 70 nm is realized after rapid thermal annealing at 1050 degrees C, 10 s, Using the baron implanted TiSi2 as diffusion source to form an ultra-shallow p(+)-n junction is prohibited by the trapping of boron inside the TiSi2. The fabrication of high quality p(+)-n junction using this technique is difficult to achieve. Incorporation of germanium into the baron containing TiSi2, the diffusion of boron inside the TiSi2 is enhanced. Boron easily out-diffuses from the TiSi2 layer into the Si substrate and forms a high quality p+-n shallow junction. Manipulating the diffusion behavior of implanted boron in the Si and TiSi2 could be achieved by the multiple implants of germanium and carbon. The chemical interaction of co-implanted ions with the boron is the key to control the baron profile inside the silicon. (C) 1998 Elsevier Science S.A. All rights reserved.
Determination of metabolites of benzene, toluene, ethylbenzene, and xylene by beta-cyclodextrin modified capillary electrophoresis
(2003-01-01)
Wang, CY
;
Huang, CT
;
Hsieh, YZ
;
應用化學系
;
Department of Applied Chemistry
A beta-cycloclextrin modified capillary electrophoresis method for determining the metabolites of benzene, toluene, ethyl benzene, and xylene (BTEX) is described. Creatinine and uric acid were also examined as reference compounds. By employing a 20 mM, pH 10.0 borax-NaOH buffer containing 7-mM of beta-CD, ten analytes could be successfully separated within 10 min on a 50 pm capillary at an electric potential of 25 kV. The effects of pH and the concentration of beta-CD on the separation of the ten analytes are discussed. Under optimized separation conditions, the relative standard deviations for the migration times of the analytes were less than 0.93% and the correlation coefficients of the analyte linear calibration graphs exceeded 0.998 in the range from 1 to 300 mug/mL. Analyses of BTEX metabolites in urine samples from both occupationally exposed and non-exposed subjects are shown herein. BTEX metabolites were determined in the urine sample of a gas station attendant.
Elucidating the industrial cluster effect from a system dynamics perspective
(2006-04-01)
Lin, CH
;
Tung, CM
;
Huang, CT
;
管理科學系
;
Department of Management Science
This study applies the system dynamics (SD) methodology to explore factors affecting the industrial cluster effect, which is crucial in determining national and industrial competitive advantage. A literature review finds few studies that utilize SD to investigate factors affecting the industrial cluster effect. In a global business environment, competition is not just between individual companies and supply chains, but also among companies in regional clusters. The concept of SD, devised by Jay W. Forrester et al, helps mankind realize the variation of a complicated system, and perceive how an internal feedback loop within a system impacts whole system's behavior. This study establishes a dynamic model of various factors of industrial cluster effect through the causal loop diagram also known as the cause-and-effect chain. This study considers four important interactive dimensions of industrial competitiveness: manpower, technology, money, and market flows. This study also constructs a comprehensive causal loop diagram of the industrial cluster effect. All factors in the cause-and-effect chains influence positively the industrial cluster effect. The SD approach is adopted to analyze the complicated relationship of factors affecting industrial cluster effect. The SD approach is more effective than other methodologies. (c) 2005 Elsevier Ltd. All rights reserved.
Improvement of ultra-thin 3.3 nm thick oxide for co-salicide process using NF3 annealed poly-gate
(1999-04-01)
Chang, TY
;
Lei, TF
;
Chao, TS
;
Huang, CT
;
Chen, SK
To get high quality ultra-thin oxide is very important and difficult for IC industry now. Using NF3 annealed poly-Si gate to improve gate oxide integrity is described. However, reducing fate, source and drain parasitic resistance with gate lengths down to 0.2 mu m is another key point. Co-salicide process can successfully reduce the gate resistance even for a gate length of 0.075 mu m. Although, Co-salicide process has a leakage problem. Using NF3 annealing to prevent Co diffusing into gate oxide is described too. Results show that the optimal NF3 annealing significantly improves electrical characteristics of ultra-thin oxide and Co-salicide process in terms of leakage current and breakdown field, as compared to the samples without NF3 annealing.
Investigation on ESD robustness of CMOS devices in a 1.8-v 0.15-mu m partially-depleted SOI salicide CMOS technology
(2001)
Ker, MD
;
Hong, KK
;
Chen, TY
;
Tang, H
;
Huang, SC
Electrostatic discharge (ESD) robustness of CMOS devices with four different layout structures fabricated in a 0.15-mum partially-depleted silicon-on-insulator (SOI) salicide CMOS process are verified by ESD tester. The second breakdown current (It2) of fabricated CMOS devices is also measured by the transmission line pulse generator (TLPG). The dependences of ESD robustness on the layout parameters of CMOS devices in this SOI CMOS process have been investigated to find the optimum layout rules for on-chip ESD protection design. The effectiveness of ESD clamp circuits designed with the gate-driven and substrate-triggered techniques are also compared in this SOI CMOS process.
On liquid-phase deposition of silicon dioxide by boric acid addition
(1997-03-01)
Chang, PH
;
Huang, CT
;
Shie, JS
;
材料科學與工程學系
;
光電工程學系
The current status of liquid-phase deposition (LPD) of SiO2 by adding boric acid (H3BO3) to a hydrofluosilicic acid (H2SiF6) is reviewed and compared with some new results from the authors' laboratory. Large discrepancies exist in the literature concerning the effects of Various processing parameters on deposition rate. We have shown that much confusion arises from the misconception of using an SiO2 additive to ''saturate'' and usng water to ''dilute'' the growth solution. In this paper the role of H2O as a reagent and the detrimental effect of an SiO2 additive as seeds for depleting the nutrient in the growth solution if added after the H2O addition are emphasized. Despite the variations between different investigators, the following characteristics of the LPD process are in general agreement: (i) the deposition process is surface controlled, (ii) the deposition rate depends approximately linearly on temperature, (iii) the deposition rate is constant (independent of time) over a wide range of experimental conditions, and (iv) the deposition rate increases with increasing boric acid concentration.
On liquid-phase deposition of silicon dioxide by boric acid addition
(1997-03-01)
Chang, PH
;
Huang, CT
;
Shie, JS
;
材料科學與工程學系
;
光電工程研究所
The current status of liquid-phase deposition (LPD) of SiO2 by adding boric acid (H3BO3) to a hydrofluosilicic acid (H2SiF6) is reviewed and compared with some new results from the authors' laboratory. Large discrepancies exist in the literature concerning the effects of Various processing parameters on deposition rate. We have shown that much confusion arises from the misconception of using an SiO2 additive to ''saturate'' and usng water to ''dilute'' the growth solution. In this paper the role of H2O as a reagent and the detrimental effect of an SiO2 additive as seeds for depleting the nutrient in the growth solution if added after the H2O addition are emphasized. Despite the variations between different investigators, the following characteristics of the LPD process are in general agreement: (i) the deposition process is surface controlled, (ii) the deposition rate depends approximately linearly on temperature, (iii) the deposition rate is constant (independent of time) over a wide range of experimental conditions, and (iv) the deposition rate increases with increasing boric acid concentration.
Optimization of short channel effect by arsenic P-Halo implant through polysilicon gate for 0.12uw P-MOSFET
(2000)
Chen, C
;
Chang, CY
;
Chou, JW
;
Huang, CT
;
Lin, KC
Excellent PMOS short channel effect is achieved by using high energy, large tilt angle arsenic implant as P-Halo. For the first time, it was found that the tail profile of P-Halo implant through the polysilicon gate, therefore, the channel concentration is modulated not only laterally from gate edge but also vertically from top of the polysilicon gate and it resulted in very flat short channel behavior. The effect of arsenic P-Halo implant was comprehensively studied and well characterized to explain this specific phenomenon. The gate oxide integrity was examined by Q(BD) and it passed the lifetime of 10 years at different conditions of P-Halo implants. Excellent performance of 0.12um PMOSFET is also demonstrated in this work.
Optimization of the headspace solid-phase microextraction for determination of glycol ethers by orthogonal array designs
(2002-11-15)
Huang, CT
;
Su, YY
;
Hsieh, YZ
;
應用化學系
;
Department of Applied Chemistry
A headspace solid-phase microextraction (HS-SPME), in conjunction with gas chromatography-flame ionization detection for use in the determination of six frequently used glycol ethers at the mug/l level is described. A 75 mum Carboxen-polydimethylsiloxane fiber was used to extract the analytes from an aqueous solution. Experimental HS-SPME parameters such as extraction temperature, extraction time, salt concentration and sample volume, were investigated and optimized by orthogonal array experimental designs. The relative standard deviations for the reproducibility of the optimized HS-SPME method varied from 1.48 to 7.59%. The correlation coefficients of the calibration curves exceeded 0.998 in the mug/l range of concentration with at least two orders of magnitude. The method detection limits for glycol ethers in deionized water were in the range of 0.26 to 3.42 mug/l. The optimized method was also applied to the analysis of glycol ethers in urine and blood samples with the method detection limits ranged from 1.74 to 23.2 mug/l. (C) 2002 Elsevier Science B.V. All rights reserved.
Photoassisted liquid-phase deposition of silicon dioxide
(1996-06-01)
Huang, CT
;
Chang, PH
;
Shie, JS
;
材料科學與工程學系
;
光電工程研究所
The deposition rate of SiO2 by liquid-phase deposition (LPD) in a H2SiF6 solution is significantly increased by 254 nm ultraviolet (UV) illumination. The photoenhancement effect is much stronger at 3.09 M H2SiF6 than at 1.34 M H2SiF6 concentration. At a constant boric acid concentration the deposition rate of SiO2 is found to increase linearly with UV light intensity. The photoassisted effect is much stronger at higher boric acid concentration. However, within the UV intensity range studied, the photoeffect on the oxide growth rate is not as strong as other parameters such as H2SiF6 concentration and boric acid addition. The UV spectrophotometric results show that the strong UV absorption of the growth solution is associated with SiF62- but not with H2O, H3BO3, or BF4- species in the solution. The observed photoenhancement effect is discussed in the light of the existing LPD models.
Photoassisted liquid-phase deposition of silicon dioxide
(1996-06-01)
Huang, CT
;
Chang, PH
;
Shie, JS
;
材料科學與工程學系
;
光電工程學系
The deposition rate of SiO2 by liquid-phase deposition (LPD) in a H2SiF6 solution is significantly increased by 254 nm ultraviolet (UV) illumination. The photoenhancement effect is much stronger at 3.09 M H2SiF6 than at 1.34 M H2SiF6 concentration. At a constant boric acid concentration the deposition rate of SiO2 is found to increase linearly with UV light intensity. The photoassisted effect is much stronger at higher boric acid concentration. However, within the UV intensity range studied, the photoeffect on the oxide growth rate is not as strong as other parameters such as H2SiF6 concentration and boric acid addition. The UV spectrophotometric results show that the strong UV absorption of the growth solution is associated with SiF62- but not with H2O, H3BO3, or BF4- species in the solution. The observed photoenhancement effect is discussed in the light of the existing LPD models.
Temperature effects of n-MOSFET devices with uniaxial mechanical strains
(2006)
Tsai, MN
;
Chang, TC
;
Liu, PT
;
Cheng, O
;
Huang, CT
This work presents a means of causing mechanical uniaxial stress in n-type metal-oxide-semiconductor field-effect transistors (MOSFETs). The proposed method provided a valuable reference for research into both strained-Si and the temperature effect. In this article, tensile stress is applied parallel or perpendicular to the channel direction at room and high temperature. The shift in the energy levels of strained silicon depends on the direction of uniaxial strain, and changes the average in-plane transport mass. (c) 2006 The Electrochemical Society.
The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source
(1996-03-01)
Huang, CT
;
Lei, TF
;
Chu, CH
;
Shvu, SH
;
電子工程學系及電子研究所
The electrical characteristics of ultra-shallow p(+)/n junctions formed by implanting a 60 keV Ge+ into a TiSi2 layer have been studied. A very low reverse leakage current density (congruent to 0.4 nA/cm(2) at -5 V) and a very good forward ideality factor n (congruent to 1.001) were achieved in these ultra-shallow p(+)/n junctions, From the secondary ion mass spectrometry (SIMS) analysis, the junction depth was measured to be 600 Angstrom and the surface concentration was about 3 times higher than that of the conventional samples.
Trends in outbound tourism from Taiwan
(1996-05-01)
Huang, CT
;
Yung, CY
;
Huang, JH
;
管理科學系
;
Department of Management Science
In 1979, Taiwan's government relaxed its bait on overseas travel, and permitted residents to travel to mainland China to visit relatives in 1987. In 1994, 4.74 million people travelled abroad, about 22% of Taiwan's total population. Thus has Taiwan become one of the world's most prominent tourist-exporting countries. In this article, we review government outbound tourism policies, analyze the market structure and the characteristics of travellers, discuss problems and propose solutions to improve the nation's outbound-tourism standing, and look at the future of Taiwan's outbound travel.