The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source

Abstract

The electrical characteristics of ultra-shallow p(+)/n junctions formed by implanting a 60 keV Ge+ into a TiSi2 layer have been studied. A very low reverse leakage current density (congruent to 0.4 nA/cm(2) at -5 V) and a very good forward ideality factor n (congruent to 1.001) were achieved in these ultra-shallow p(+)/n junctions, From the secondary ion mass spectrometry (SIMS) analysis, the junction depth was measured to be 600 Angstrom and the surface concentration was about 3 times higher than that of the conventional samples.