The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source
| dc.citation.epage | 90 | en_US |
| dc.citation.issue | 3 | en_US |
| dc.citation.spage | 88 | en_US |
| dc.citation.volume | 17 | en_US |
| dc.citation.woscount | 6 | |
| dc.contributor.author | Huang, CT | en_US |
| dc.contributor.author | Lei, TF | en_US |
| dc.contributor.author | Chu, CH | en_US |
| dc.contributor.author | Shvu, SH | en_US |
| dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
| dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
| dc.date.accessioned | 2014-12-08T15:02:47Z | |
| dc.date.available | 2014-12-08T15:02:47Z | |
| dc.date.issued | 1996-03-01 | en_US |
| dc.description.abstract | The electrical characteristics of ultra-shallow p(+)/n junctions formed by implanting a 60 keV Ge+ into a TiSi2 layer have been studied. A very low reverse leakage current density (congruent to 0.4 nA/cm(2) at -5 V) and a very good forward ideality factor n (congruent to 1.001) were achieved in these ultra-shallow p(+)/n junctions, From the secondary ion mass spectrometry (SIMS) analysis, the junction depth was measured to be 600 Angstrom and the surface concentration was about 3 times higher than that of the conventional samples. | en_US |
| dc.identifier.doi | 10.1109/55.485176 | en_US |
| dc.identifier.issn | 0741-3106 | en_US |
| dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1109/55.485176 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/1420 | |
| dc.identifier.wosnumber | WOS:A1996TX68200003 | |
| dc.language.iso | en_US | en_US |
| dc.title | The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion source | en_US |
| dc.type | Article | en_US |