Browsing by Author "Huang, GW"

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5.4GHz-127 dBc/Hz at 1MHz GaInP/GaAs HBT quadrature VCO using stacked transformers
(2005-08-04)
Meng, CC
;
Chen, CH
;
Chang, YW
;
Huang, GW
;
電信工程研究所
The first fully integrated GaInP/GaAs heterojunction bipolar transistor (HBT) quadrature voltage controlled oscillator (VCO) using the stacked-transformer LC tank is demonstrated at 5.43-5.31 GHz with low-phase-noise performance. The stacked-transformers are formed by two interconnect metal layers and possess good electrical properties at high frequencies because of the semi-insulating GaAs substrate. The quadrature VCO at 5.38 GHz has phase noise of -127.4 dBc/Hz at 1 MHz offset frequency, output power of -4 dBm and a figure of merit (FOM) -191 dBc/Hz.
A 0.18-mu m CMOS CMFB downconversion micromixer with deep N-well technology for LO-RF and LO-IF isolation improvements
(2005-04-20)
Meng, CC
;
Hsu, SK
;
Wu, TH
;
Huang, GW
;
電信工程研究所
CMOS deep N-well technology can eliminate the physical effects of NMOS transistors and reduce substrate noise and coupling in order to reach the NMOS channel. These properties result in better LO-IF and LO-RF isolations in a Gilbert micromixer. Two identical 0.18-mu m CMOS downconversion micromixers (except at the RF input stage) with deep N-well or without deep N-well are fabricated in adjacent areas of the same wafer for the purpose of isolation comparison. A -37-dB LO-IF and -38-dB LO-RF isolation downconversion micromixer with 19-dB conversion gain and IP1dB = -20 dBm and IIP3 = -13 dBm when RF = 2.4 GHz and LO = 2.25 GHz is demonstrated here using 0.18-mu m-deep N-well CMOS technology. On the other hand, a downconversion micromixer without deep N-well has almost identical power performance but achieves only -20-dB LO-IF isolation and -21-dB LO-RF isolation. (c) 2005 Wiley Periodicals, Inc.
A 5.7 GHz Gilbert upconversion mixer with an LC current combiner output using 0.35 mu m SiGe HBT technology
(2005-06-01)
Wu, TH
;
Meng, CC
;
Wu, TH
;
Huang, GW
;
電信工程研究所
This paper demonstrates a small compact 5.7 GHz upconversion Gilbert micromixer using 0.35 mu m SiGe HBT technology. A micromixer has a broadband matched single-ended input port. A passive LC current combiner is used to convert micromixer differential output into a single-ended output and doubles the output current for single-ended-input and single-ended-output applications. Thus, a truly balanced operation of a Gilbert upconversion mixer with a single-ended input and a single-ended output is achieved in this paper. The fully matched upconversion micromixer has conversion gain of -4 dB, OP(1 dB) of -9 dBm and OIP(3) of 4 dBm when input IF=0.3 GHz. LO=5.4 GHz and output RF=5.7 GHz. The IF input return loss is better than IS dB for frequencies up to 20 GHz while RF output return loss is 25 dB at 5.7 GHz. The supply voltage is 3.3 V and the current consumption is 4.6 mA. The die size is 0.9 X 0.9 mm(2) with 3 integrated on-chip inductors.
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
(2003-01-01)
Meng, CC
;
Hsu, SK
;
Peng, AS
;
Wen, SY
;
Huang, GW
A 5.2 GHz; upconversion micromixer with output LC current combiner and integrated oscillator is demonstrated in 2 mum GaInP/GaAs HBT technology in this paper. Micromixer has a single-ended input and a passive LC current combiner is used to convert mixer differential output into a single-ended output. A cross-coupled LC oscillator with oscillation frequency of 4.3 GHz; and a cascode buffer amplifier are also integrated in the same chip. The die size is 1 mm(2). The fully integrated upconversion micromixer has conversion gain of -2.5 dB, OP1dB of -12.5 dBm and 40 dB RF-IF isolation when input IF=0.9 GHz and thus output RF=5.2 GHz. The IF input return loss is better than 25 dB for frequencies up to 6 GHz: while RF output return loss is better than 12 dB for frequencies from 5.15 GHz; to 5.35 GHz.
A fully integrated 5.2 GHz GaInP/GaAs HBT upconversion micromixer with output LC current combiner and oscillator
(2003)
Meng, CC
;
Hsu, SK
;
Peng, AS
;
Wen, SY
;
Huang, GW
A 5.2 GHz upconversion micromixer with output LC current combiner and integrated oscillator is demonstrated in 2 mum GaInP/GaAs HBT technology in this paper. Micromixer has a single-ended input and a passive LC current combiner is used to convert mixer differential output into a single-ended output. A cross-coupled LC oscillator with oscillation frequency of 4.3 GHz and a cascode buffer amplifier are also integrated in the same chip. The die size is 1 mm(2). The fully integrated upconversion micromixer has conversion gain of -2.5 dB, OP1dB of -12.5 dBm and 40 dB RF-IF isolation when input IF=0.9 GHz and thus output RF=5.2 GHz. The IF input return loss is better than 25 dB for frequencies up to 6 GHz while RF output return loss is better than 12 dB for frequencies from 5.15 GHz to 5.35 GHz.
A fully integrated 5.2 GHz SiGe HBT upconversion micromixer using lumped balun and LC current combiner
(2005)
Wu, TH
;
Meng, CC
;
Wu, TH
;
Huang, GW
;
電信工程研究所
A small and compact 5.2 GHz upconversion Gilbert micromixer using 0.35 mu m SiGe HBT technology is demonstrated in this paper. The upconversion micromixer has a broadband matched single-ended IF input port. A lumped-clement rat-race hybrid is inserted in the LO input stage to maintain LO phase accuracy. A passive LC current Combiner is used to convert the micromixer differential output into a single-ended output and double the output current. Thus, the IF port, LO port and RF port of the upconverter are single-ended, and the stand-along upconverter is suitable for hybrid RF system applications. The fully matched high linearity micromixer has the conversion gain of -1 dB, OpidB of -10 dBm, OIP(3) of 6 dBm when input IF=300 MHz, LO=4.9 GHz and output RF=5.2 GHz. The IF input return loss is better than 10 dB for frequencies up to 20 GHz while the RF output return loss is better than 13.5 dB for frequencies up to 20 GHz. The supply voltage is 3.3 V, the current consumption is 11.5 mA, and the die size is 0.98x0.83 mm(2) with 6 integrated on-chip inductors.
A fully integrated 5.2-GHz single-ended-in and single-ended-out 0.18-mu m CMOS Gilbert upconverter
(2004-11-05)
Meng, CC
;
Lin, MQ
;
Huang, GW
;
電信工程研究所
;
Institute of Communications Engineering
A monolithic 5.2-GHz single-ended-in and single-ended-out Gilbert upconverter with balanced operation is demonstrated using 0.18-mum deep n-well CMOS technology. Thefully matched Gilbert upconverter has conversion gain of - 11.5 dB and OPIdB of - 19 dBm when input IF = 300 MHz, LO = 4.9 GHz, and output RF = 5.2 GHz. The IF input return loss is better than 14 dB for frequencies up to 7 GHz, while RF output return loss is 15 dB at 5.2 GHz. (C) 2004 Wiley Periodicals, Inc.
A high isolation CMFB downconversion micromixer using 0. 18-urn deep N-well CMOS technology
(2003)
Meng, CC
;
Xu, SK
;
Wu, TH
;
Chao, MH
;
Huang, GW
CMOS deep N-well technology can eliminate body effects of NMOS transistors and improve LO-IF and LO-RF isolation in a Gilbert micromixer. A 37 dB LO-IF and 38 dB LO-RF isolation downconversion micromixer with 19 dB conversion gain, IP1dB=-19.5 dBm and IIP3=-12.5 dBm when RF=2.4 GHz and LO=2.25 GHz is demonstrated in this paper by using 0.18 mum deep N-well CMOS technology. e input return loss and output return loss are better than 15 dB for frequencies up to 6 GHz. On the other hand, a downconversion micromixer without deep n-well has almost identical power performance but achieves only 20 dB LO-IF isolation and 21 dB LO-RF isolation even if two kinds of mixers are fabricated in adjacent areas of the same wafer. The downconversion micromixer used here has intrinsically single-to-differential input stage and active differential PMOS loads to increase IF differential gain while CMFB is used to stabilize bias points. An IF differential amplifier converts differential output into a single-ended output. Finally, an off-chip rat-race coupler provides balanced LO signals to facilitate isolation measurement.
A high isolation CMFB downconversion micromixer using 0.18-mu m deep N-well CMOS technology
(2003)
Meng, CC
;
Xu, SK
;
Wu, TH
;
Chao, MH
;
Huang, GW
CMOS deep N-well technology can eliminate body effects of NMOS transistors and improve LO-IF and LO-RF isolation in a Gilbert micromixer. A 37 dB LO-IF and 38 dB LO-RF isolation downconversion micromixer with 19 dB conversion gain, IP1dB=-19.5 dBm and IIP3=-12.5 dBm when RF=2.4 GHz and LO=2.25 GHz; is demonstrated in this paper by using 0.18 mum deep N-well CMOS technology. The input return loss and output return loss are better than 15 dB for frequencies up to 6 GHz. On the other hand, a downconversion micromixer without deep n-well has almost identical power performance but achieves only 20 dB LO-IF isolation and 21 dB LO-RF isolation even if two kinds of mixers are fabricated in adjacent areas of the same wafer. The downconversion micromixer used here has intrinsically single-to-differential input stage and active differential PMOS loads to increase IF differential gain while CMFB is used to stabilize bias points. An IF differential amplifier converts differential output into a single-ended output. Finally, an off-chip rat-race coupler provides balanced LO signals to facilitate isolation measurement.
A macro model of silicon spiral inductor
(2002-05-01)
Su, CY
;
Chen, LP
;
Chang, SJ
;
Tseng, BM
;
Lin, DC
A new automatic parameter extraction method for modeling Of silicon Spiral inductors is presented. The Concepts on self-resonance frequency (f(sr)) and quality factor of a spiral inductor are utilized to develop the concise extraction procedures. In the mean time, the presented extraction procedures are programmed as a macro to execute all the extractions automatically and shorten the extraction time effectively. Without any additional optimization or curve fitting, almost all the patterns of S-parameters between the measured and the simulation of extracted data implemented with the extraction macro are less than 5%. The programmed extraction macro makes it fast and accurate to extract and characterize the behaviours or silicon-based spiral inductors with different structures and substrate resistivities. It provides a concrete foundation commercial silicon radiofrequency (RF) Circuit design to realizing on-chip silicon RF integrated circuits. Furthermore, the directly extracted equivalent model parameters, without an optimization, also provide a rule to fairly, effectively and phsically judge the performance of a spiral inductor. (C) 2002 Elsevier Science Ltd. All rights reserved.
A method to characterize the dielectric and interfacial properties of metal-insulator-semiconductor structures by microwave measurement
(2002-04-15)
Lue, HT
;
Tseng, TY
;
Huang, GW
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have developed a method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. Ba0.5Sr0.5TiO3 (BST) thin films were deposited on 10 Omega cm (normal) and 10 k Omega cm [high-resistivity, (HR)] silicon substrates at the same time by rf magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with thru-reflect-line calibration while capacitance (C-V) measurements were carried out for BST/normal silicon. From the phase change of CPW transmission line and the maximum capacitance in C-V measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were investigated. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal-insulator-semiconductor structures. (C) 2002 American Institute of Physics.
A monolithic 5.2-GHz single-ended input and single-ended output GaInP/GaAs HBT upconversion Gilbert mixer with integrated oscillator
(2005-05-20)
Meng, CC
;
Hsu, SK
;
Huang, GW
;
電信工程研究所
;
Institute of Communications Engineering
A truly balanced operation of a 5.2-GHz Gilbert micromixer with a single-ended input and a single-ended output is demonstrated using 2-mu m GaInP/GaAs HBT technology. Because the micromixer has a single-ended input, a passive LC current combiner is used to convert the mixer-differential output into a single-ended output. A cross-coupled LC oscillator with oscillation frequency of 4.3 GHz and a cascode buffer amplifier are also integrated in the same chip. The fully integrated upconversion micromixer has conversion gain of -2.5 dB and OPIdb of - 12.5 dBm when input IF = 0.9 GHz and thus output RF = 5.2 GHz. The IF input return loss is better than 25 dB for frequencies up to 6 GHz, while the RF output return loss is better than 12 dB for frequencies from 5.15 to 5.35 GHz. (c) 2005 Wiley Periodicals, Inc.
A new method to extract MOSFET threshold voltage, effective channel length, and channel mobility using S-parameter measurement
(2004-05-01)
Chen, HY
;
Chen, KM
;
Huang, GW
;
Chang, CY
;
Huang, TY
In this work, a simple method for extracting MOSFET threshold voltage, effective channel length and channel mobility by using S-parameter measurement is presented. In the new method, the dependence between the channel conductivity and applied gate voltage of the MOSFET device is cleverly utilized to extract the threshold voltage, while biasing the drain node of the device at zero voltage during measurement. Moreover, the effective channel length and channel mobility can also be obtained with the same measurement. Furthermore, all the physical parameters can be extracted directly on the modeling devices without relying on specifically designed test devices. Most important of all, only one S-parameter measurement is required for each device under test (DUT), making the proposed extraction method promising for automatic measurement applications.
A novel approach for parameter determination of HBT small-signal equivalent circuit
(2005-06-01)
Chen, HY
;
Chen, KM
;
Huang, GW
;
Chang, CY
;
電子工程學系及電子研究所
Direct parameter extraction is believed to be the most accurate method for equivalent-circuits modeling of heterojunction bipolar transistors (HBT's). Using this method, the parasitic elements, followed by the intrinsic elements, are determined analytically. Therefore, the quality of the extrinsic elements extraction plays an important role in the accuracy and robustness of the entire extraction algorithm. This study proposes a novel extraction method for the extrinsic elements, which have been proven to be strongly correlated with the intrinsic elements. By utilizing the specific correlation. the equivalent circuit modeling is reduced to an optimistation problem of determining six specific extrinsic elements. Converting the intrinsic equivalent circuit into its common-col lector configuration, all intrinsic circuit elements are extracted using exact closed-form equations for both the hybrid-pi and the T-topology equivalent circuits. Additionally, a general explicit equation on the total extrinsic elements is derived, subsequently reducing the number of optimization variables. The modeling results are presented, showing that the proposed method can yield a good fit between the measured and calculated S parameters.
A novel method to characterize the dielectric and interfacial properties of Ba0.5Sr0.5TiO3 (BST)/Si by microwave measurement
(2002)
Lue, HT
;
Tseng, TY
;
Huang, GW
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
We have developed a new method to investigate the dielectric and interfacial properties of gate dielectric thin films by microwave measurement. BST thin films were deposited on 10 Omega-cm (normal) and 10 kOmega-cm (high-resistivity, HR) silicon substrates. at the same time by RF magnetron sputtering. For the BST/HR-silicon, coplanar waveguides (CPW) were fabricated and measured at microwave frequencies with Thru-Reflect-Line (TRL) calibration while CV measurements were carried out for BST/normal-silicon. From the phase change of CPW transmission line and the maximum capacitance in CV measurement, the dielectric constants of both the BST thin film and interface layer can be determined. Furthermore, the behaviors of insertion loss versus bias voltage were found to be correlated with the trap states density. The results indicate that our method can provide useful information to study the dielectric and interfacial properties of metal - insulator - semiconductor (MIS) structures.
A scalable noise de-embedding technique for on-wafer microwave device characterization
(2005-10-01)
Cho, MH
;
Huang, GW
;
Wang, YH
;
Wu, LK
;
電信工程研究所
In this letter, we present a scalable and efficient noise de-embedding procedure, which is based on transmission-line theory and cascade configurations, for on-wafer microwave measurements of silicon MOSFETs. The proposed de-embedding procedure utilizes one open and one thru dummy structures to eliminate the parasitic effects from the probe pads and the input/output interconnects of a device-under-test (DUT), respectively. This method can generate the scalable distributed interconnect parameters to efficiently and precisely remove the redundant parasitics of the DUTs with various device sizes and arbitrary interconnect dimensions.
A shield-based three-port de-embedding method for microwave on-wafer characterization of deep-submicrometer silicon MOSFETs
(2005-09-01)
Cho, MH
;
Huang, GW
;
Wu, LK
;
Chiu, CS
;
Wang, YH
A general three.-port S-parameter de-embedding method using shield-based test structures for microwave on-wafer characterization is presented in this paper. This method does not require any physical equivalent-circuit assumption for the surrounding parasitics of a device-under-test. We use one open and three thru dummy devices to remove the parasitic components connected to the gate, drain, and source terminals of a MOSFET. By shielding the lossy silicon substrate, the cross-coupling from port to port can be significantly mitigated, and thus, the parasitics of probe pads and interconnects at each port can be separately subtracted. The MOS transistor and its corresponding dummy structures fabricated in a 0.18-mu m CMOS process were characterized up to 20 GHz. Compared with the two-port cascade-based de-embedding method, the proposed three-port de-embedding procedure can further eliminate the parasitics associated with the dangling leg in the source terminal. The impacts of the accuracy of the de-embedding technique on device modeling and simulation are also discussed.
An accurate RF CMOS gate resistance model compatible with HSPICE
(2004)
Lin, HW
;
Chung, SS
;
Wong, SC
;
Huang, GW
;
電子工程學系及電子研究所
Two important models, which are crucial to the RF CMOS, are the gate resistance and substrate resistance. Both are closely related to the development of accurate device and/or circuit models, such as noise. From the experimental observations, we found that the gate resistance depends largely on the bias and temperature. It will greatly impact the device performance at high frequency. For the first time, a simple and analytical physical-based gate resistance model is developed in this paper and has been implemented in Spice. The gate resistance is modeled by a parallel interconnection of the intrinsic gate resistance and a resistance coupled from the channel. The Spice simulation result of this model is more accurate than that of using a constant R-g model. A constant Rg model will overestimate the value of Y-11. While, in contrast, the proposed nonlinear gate resistance model with both bias and frequency dependent feature can achieve very good accuracy.
An automatic macro program for radio frequency MOSFET characteristics analysis
(2001-10-01)
Su, CY
;
Chang, SJ
;
Chen, LP
;
Ho, YP
;
Huang, GW
The parameter extraction language (PEL) in Agilent IC-CAP software is used to develop an automatic macro program for the analysis of the characteristics of RF MOSFETs. By using this powerful macro program, the time spent on the measurement of the MOSFET characteristics and the related analysis is effectively reduced. This macro program permits a fast and accurate method to obtain the DC and RF characteristics of MOSFETs with different device geometries and operating conditions. It is also suitable for high volume measurements and analyses of MOSFET, and provides a solid jou 71 dation for RF circuit design.
An improved approach for small-signal equivalent-circuit parameter determination of InGaP/GaAs HBT
(2005-03-05)
Chen, HY
;
Chen, KM
;
Huang, GW
;
Chang, CY
;
Huang, TY
In this paper, an improved method for extracting the small-signal equivalent-circuit elements of an HBT is proposed. A more general HBT equivalent circuit and a more general explicit equation on the total extrinsic elements are introduced. Linear least-square algorithms are cleverly adopted to reduce the number of error function. As a result, the modified approach can yield a better fit between the measured and simulated S-parameters over the conventional method. (C) 2005 Wiley Periodicals, Inc.