Browsing by Author "Huang, Jiang-Wen"

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Hafnium silicate nanocrystal memory using sol-gel-spin-coating method
(2006-08-01)
You, Hsin-Chiang
;
Hsu, Tze-Hsiang
;
Ko, Fu-Hsiang
;
Huang, Jiang-Wen
;
Lei, Tan-Fu
The authors fabricate the hafnium silicate nanocrystal memory for the first time using a very simple sol-gel-spincoating method and 900 degrees C 1-min rapid thermal annealing (RTA). From the TEM identification, the nanocrystals are formed as the charge trapping layer after 900 degrees C 1-min RTA and the size is about 5 mn. They demonstrate the composition of nanocrystal is hafnium silicate from the X-ray-photoelectron-spectroscopy analysis. They verify the electric properties in terms of program/erase (P/E) speed, charge retention, and endurance. The sol-gel device exhibits the long charge retention time of 10(4) s with only 6% charge loss, and good endurance performance for P/E cycles up to 10(5).
SONOS-type flash memory using an HfO2 as a charge trapping layer deposited by the sol-gel spin-coating method
(2006-08-01)
You, Hsin-Chiang
;
Hsu, Tze-Hsiang
;
Ko, Fu-Hsiang
;
Huang, Jiang-Wen
;
Yang, Wen-Luh
In this letter, the authors fabricate the silicon-oxide-nitride-oxide-silicon(SONOS)-like memory using an HfO2 as charge trapping layer deposited by a very simple sol-gel spin-coating method and 900 degrees C 1-min rapid thermal annealing. They examine the quality of sol-gel HfO2 charge trapping layer by X-ray photoemission spectroscopy, Id-Vg, charge retention, and endurance. The threshold voltage shift is 1.2 V for the sol-gel HVO2 trapping layer. The sol-gel HfO2 film can form a deep trap layer to trap electrons for the SONOS-like memory. Therefore, the sol-gel device exhibits the long charge retention time and good endurance performance. The charge retention time is 10(4) s with only 6% charge loss and long endurance program/erase cycles up to 10(5).