Browsing by Author "Huang, Sheng-Yi"

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Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications
(2010-04-01)
Wang, Sheng-Chun
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Su, Pin
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Chen, Kun-Ming
;
Liao, Kuo-Hsiang
;
Chen, Bo-Yuan
Using an external tuner-based method, this paper demonstrates a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65-nm MOSFETs for the first time. Due to channel length modulation, the channel noise continues to increase and remains the most important noise source in the millimeter-wave band. Our experimental results further show that, with the downscaling of channel length, the gate resistance has more serious impact on the high-frequency noise parameters than the substrate resistance even in the millimeter-wave frequency.
Design for integration of RF power transistors in 0.13 mu m advanced CMOS technology
(2007)
Huang, Sheng-Yi
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Chen, Kun-Ming
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Huang, Guo-Wei
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Chang, Chun-Yen
;
Hung, Cheng-Chou
An RF power MOSFET was proposed and manufactured in a standard 0.13 mu m CMOS technology. Without adding additional masks, cost and process, the breakdown voltage can be improved by using the N-well and shallow-trench-isolation processes to form a drift n(-) region. The breakdown voltage was 4.3V at gate bias of 1.2V. The cutoff frequency and maximum oscillation frequency were 68GHz and 87GHz, respectively. In addition, the power gain, output power and power-added efficiency were 16.8dB, 15.9dBm and 43.5%, respectively, at 2.4GHz. Good RF linearity also addressed OIP3 of 28.6dBm. The presented RF power transistor is cost effectively and can be applied into the power amplifier integration for RF SoC.
Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
(2011-03-01)
Wang, Sheng-Chun
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Su, Pin
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Chen, Kun-Ming
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Chen, Bo-Yuan
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Huang, Guo-Wei
For the first time, the high-frequency noise behavior of tensile-strained n-channel metal-oxide-semiconductor field-effect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has better small-signal behaviors (higher f(t) and f(max)) and noise characteristics (smaller NF(min) and R(n)) than the control device.
Power Improvement for 65nm nMOSFET with High-Tensile CESL and Fast Nonlinear Behavior Modeling
(2010)
Chiu, Chia-Sung
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Chen, Kun-Ming
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Huang, Guo-Wei
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Lin, Shu-Yu
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Chen, Bo-Yuan
In this paper, the power gain improvements by stress contact etch stop layer (CESL) in a 65-nm nMOSFET were studied. Compared to the conventional nMOSFET, the device with CESL stress shows an extra 6% power gain enhancement for the increased stress in the channel region. This study also presents the polyharmonic distortion (PHD) model extraction by X-parameters measurement when the power transistor was designed to work far from 50 ohms. By mean of this model, the accurate nonlinear behaviors of nMOSFET were obtained rapidly.
Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal-Oxide-Semiconductor Field-Effect Transistors
(2009-04-01)
Wang, Sheng-Chun
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Su, Pin
;
Chen, Kun-Ming
;
Huang, Sheng-Yi
;
Hung, Cheng-Chou
This paper presents small-signal and noise modeling for radio-frequency (RF) silicon-on-insulator (SOI) dynamic threshold voltage (DT) metal-oxide-semiconductor field-effect transistors (MOSFETs). The inherent body parasitics, such as source- and drain-side junction capacitances, and access body resistance have been incorporated in this model. In addition, the analytical equations useful for parameter extractions are derived. The modeling results show good agreements with the measured data both in RF small-signal and noise aspects up to 12 GHz. Besides, we have made comparisons of important model parameters for DT and standard MOSFETs. The extracted parameters show reasonable trend with respect to applying voltages and channel lengths, which reveals the accuracy of the extraction results using our proposed method. (C) 2009 The Japan Society of Applied Physics
Temperature Dependences of RF Small-Signal Characteristics for the SOI Dynamic Threshold Voltage MOSFET
(2009)
Wang, Sheng-Chun
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Su, Pin
;
Chen, Kun-Ming
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Huang, Sheng-Yi
;
Hung, Cheng-Chou
In this paper, the temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage (DT) MOSFET (- 25. to 125 degrees C) are examined under different bias points. The temperature effects on the intrinsic small-signal parameters and body-related parasitics are also investigated. Moreover, along with our proposed expressions for the cut-off and maximum oscillation frequencies (f(t) and f(max)), the impact of these intrinsic parameters and parasitics on the temperature behaviors of the DT MOSFET's RF performance can be well captured and described.
Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
(2010-09-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Liao, Kuo-Hsiang
;
Chen, Bo-Yuan
In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (f(t) and f(max)) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on f(max) than f(t). Besides, we found that the noise stemmed from the body resistance (R(b)) would contribute to the output noise current, and degrade the minimum noise figure (NF(min)). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.