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Browsing by Author "Huang, Shih-Hian"

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    Investigation of the strained PMOS on (110) substrate
    (2007)
    Tang, Chun-Jung
    ;
    Huang, Shih-Hian
    ;
    Wang, Tahui
    ;
    Chang, Chih-Sheng
    ;
    電子工程學系及電子研究所
    This paper performed a detail study on the strained PMOS fabricated on the (I 10) Si substrate. We showed that in the (I 10) plane, the four-fold symmetry direction, <111(,)>, has the ideal band-structure features for the uniaxial-process-induced hole mobility enhancement. We then characterized the mobility and back scattering ratio of the (110)/<111(,)> PMOS with multiple process induced stressors.