Browsing by Author "Huang, Wei-Hsun"

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Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor
(2014-11-01)
Fuh, Chur-Shyang
;
Liu, Po-Tsun
;
Huang, Wei-Hsun
;
Sze, Simon M.
;
電子工程學系及電子研究所
This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 degrees C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm(2)/Vs, threshold voltage (V-th) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 degrees C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to 2.16x10(17) cm(-3)eV(-1) and 4.38x10(12) cm(-2) eV(-1), respectively. The positive bias stability of 400 degrees C annealed a-IZTO TFTs is also effectively improved with a Vth shift of 0.92 V.
Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility
(2012)
Fan, Yang-Shun
;
Hsu, Ching-Hui
;
Chang, Chih-Hsiang
;
Huang, Wei-Hsun
;
Yu, Ming-Chang
The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10(4) pulse endurance, 10(4)s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.