Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility

Abstract

The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10(4) pulse endurance, 10(4)s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.