Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility

Title:	Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility
Authors:	Fan, Yang-Shun Hsu, Ching-Hui Chang, Chih-Hsiang Huang, Wei-Hsun Yu, Ming-Chang Liu, Po-Tsun 光電工程學系 Department of Photonics
Keywords:	Flexible;Non-volatile Memory;RRAM;IGZO;Reliability
Issue Date:	2012
Abstract:	The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10(4) pulse endurance, 10(4)s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.
URI:	http://hdl.handle.net/11536/135498
ISSN:	1883-2490
Journal:	IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, VOL 19
Volume:	19
Begin Page:	783
End Page:	784
Appears in Collections:	Conferences Paper

APA	Fan, Y., Hsu, C., Chang, C., Huang, W., Yu, M., & Liu, P. (2012). Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility. WOS:000393448700203.
Bibtex	@article{Fan2012Flexible, title={Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility}, author={Fan, Yang-Shun and Hsu, Ching-Hui and Chang, Chih-Hsiang and Huang, Wei-Hsun and Yu, Ming-Chang and Liu, Po-Tsun}, journal={WOS:000393448700203}, year={2012}, url={https://ir.lib.nycu.edu.tw/handle/11536/135498}, }