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dc.contributor.authorFan, Yang-Shunen_US
dc.contributor.authorHsu, Ching-Huien_US
dc.contributor.authorChang, Chih-Hsiangen_US
dc.contributor.authorHuang, Wei-Hsunen_US
dc.contributor.authorYu, Ming-Changen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.date.accessioned2017-04-21T06:49:55Z-
dc.date.available2017-04-21T06:49:55Z-
dc.date.issued2012en_US
dc.identifier.issn1883-2490en_US
dc.identifier.urihttp://hdl.handle.net/11536/135498-
dc.description.abstractThe memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10(4) pulse endurance, 10(4)s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.en_US
dc.language.isoen_USen_US
dc.subjectFlexibleen_US
dc.subjectNon-volatile Memoryen_US
dc.subjectRRAMen_US
dc.subjectIGZOen_US
dc.subjectReliabilityen_US
dc.titleFlexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibilityen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, VOL 19en_US
dc.citation.volume19en_US
dc.citation.spage783en_US
dc.citation.epage784en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000393448700203en_US
dc.citation.woscount0en_US
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