標題: Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs
作者: Wu, Shih-Chieh
Feng, Hsien-Tsung
Yu, Ming-Jiue
Wang, I-Ting
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs);flexible electronics;random access memory (RRAM);resistive switching;three-bit-per-cell
公開日期: 1-十月-2013
摘要: This letter proposes a novel high bit density nonvolatile memory using a logic compatible flexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) structure fabricated at low temperature. Before electrical forming, the a-IGZO TFT exhibits excellent transistor performance, including an ON/OFF current ratio of 8.8 x 10(6), a steep subthreshold slope of 0.14 V/decade, a threshold voltage of 0.55 V, and a maximum field-effect mobility of 2 cm(2)/Vs. After electrical forming, a three-bit-per-cell resistive switching memory is realized using localized multilevel resistance states at the drain and source bits. Combining dual functionalities to achieve low-cost integration and excellent device characteristics at bending states, the proposed device is promising for future system-on-plastic applications.
URI: http://dx.doi.org/10.1109/LED.2013.2278098
http://hdl.handle.net/11536/22688
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2278098
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 10
起始頁: 1265
結束頁: 1267
顯示於類別:期刊論文


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