標題: | Flexible Three-Bit-Per-Cell Resistive Switching Memory Using a-IGZO TFTs |
作者: | Wu, Shih-Chieh Feng, Hsien-Tsung Yu, Ming-Jiue Wang, I-Ting Hou, Tuo-Hung 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs);flexible electronics;random access memory (RRAM);resistive switching;three-bit-per-cell |
公開日期: | 1-十月-2013 |
摘要: | This letter proposes a novel high bit density nonvolatile memory using a logic compatible flexible amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) structure fabricated at low temperature. Before electrical forming, the a-IGZO TFT exhibits excellent transistor performance, including an ON/OFF current ratio of 8.8 x 10(6), a steep subthreshold slope of 0.14 V/decade, a threshold voltage of 0.55 V, and a maximum field-effect mobility of 2 cm(2)/Vs. After electrical forming, a three-bit-per-cell resistive switching memory is realized using localized multilevel resistance states at the drain and source bits. Combining dual functionalities to achieve low-cost integration and excellent device characteristics at bending states, the proposed device is promising for future system-on-plastic applications. |
URI: | http://dx.doi.org/10.1109/LED.2013.2278098 http://hdl.handle.net/11536/22688 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2013.2278098 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 34 |
Issue: | 10 |
起始頁: | 1265 |
結束頁: | 1267 |
顯示於類別: | 期刊論文 |