標題: | Multilevel resistive switching memory with amorphous InGaZnO-based thin film |
作者: | Hsu, Ching-Hui Fan, Yang-Shun Liu, Po-Tsun 光電工程學系 顯示科技研究所 Department of Photonics Institute of Display |
公開日期: | 11-二月-2013 |
摘要: | Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792316] |
URI: | http://dx.doi.org/10.1063/1.4792316 http://hdl.handle.net/11536/21219 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4792316 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 102 |
Issue: | 6 |
結束頁: | |
顯示於類別: | 期刊論文 |