Multilevel resistive switching memory with amorphous InGaZnO-based thin film

doi:10.1063/1.4792316

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, Ching-Hui	en_US
dc.contributor.author	Fan, Yang-Shun	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.date.accessioned	2014-12-08T15:29:30Z	-
dc.date.available	2014-12-08T15:29:30Z	-
dc.date.issued	2013-02-11	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.4792316	en_US
dc.identifier.uri	http://hdl.handle.net/11536/21219	-
dc.description.abstract	Multi-level storage capability of resistive random access memory (RRAM) using amorphous indium-gallium-zinc-oxide (InGaZnO) thin film is demonstrated by the TiN/Ti/InGaZnO/Pt device structure under different operation modes. The distinct four-level resistance states can be obtained by varying either the trigger voltage pulse or the compliance current. In addition, the RRAM devices exhibit superior characteristics of programming/erasing endurance and data retention for the application of multi-level nonvolatile memory technology. Physical transport mechanisms for the multi-level resistive switching characteristics are also deduced in this study. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792316]	en_US
dc.language.iso	en_US	en_US
dc.title	Multilevel resistive switching memory with amorphous InGaZnO-based thin film	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.4792316	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	102	en_US
dc.citation.issue	6	en_US
dc.citation.epage		en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	顯示科技研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of Display	en_US
dc.identifier.wosnumber	WOS:000315053300067	-
dc.citation.woscount	10	-
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