Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility

標題:	Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility
作者:	Fan, Yang-Shun Hsu, Ching-Hui Chang, Chih-Hsiang Huang, Wei-Hsun Yu, Ming-Chang Liu, Po-Tsun 光電工程學系 Department of Photonics
關鍵字:	Flexible;Non-volatile Memory;RRAM;IGZO;Reliability
公開日期:	2012
摘要:	The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10(4) pulse endurance, 10(4)s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.
URI:	http://hdl.handle.net/11536/135498
ISSN:	1883-2490
期刊:	IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, VOL 19
Volume:	19
起始頁:	783
結束頁:	784
Appears in Collections:	Conferences Paper