Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility

dc.citation.epage	784	en_US
dc.citation.spage	783	en_US
dc.citation.volume	19	en_US
dc.citation.woscount	0	en_US
dc.contributor.author	Fan, Yang-Shun	en_US
dc.contributor.author	Hsu, Ching-Hui	en_US
dc.contributor.author	Chang, Chih-Hsiang	en_US
dc.contributor.author	Huang, Wei-Hsun	en_US
dc.contributor.author	Yu, Ming-Chang	en_US
dc.contributor.author	Liu, Po-Tsun	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.date.accessioned	2017-04-21T06:49:55Z
dc.date.available	2017-04-21T06:49:55Z
dc.date.issued	2012	en_US
dc.description.abstract	The memory characteristics of a-IGZO RRAM reveal excellent reliability including 1000 times DC sweep endurance, 10(4) pulse endurance, 10(4)s data retention with read disturb immunity. Furthermore, this work also demonstrated on flexible substrate, which shows the very potential flexibility applications.	en_US
dc.identifier.issn	1883-2490	en_US
dc.identifier.journal	IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, VOL 19	en_US
dc.identifier.uri	https://ir.lib.nycu.edu.tw/handle/11536/135498
dc.identifier.wosnumber	WOS:000393448700203	en_US
dc.language.iso	en_US	en_US
dc.subject	Flexible	en_US
dc.subject	Non-volatile Memory	en_US
dc.subject	RRAM	en_US
dc.subject	IGZO	en_US
dc.subject	Reliability	en_US
dc.title	Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and Flexibility	en_US
dc.type	Proceedings Paper	en_US

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