Browsing by Author "Huang, Wen-Chang"

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Al Schottky contact on p-GaSe
(2006-10-01)
Huang, Wen-Chang
;
Su, Shui-Hsiang
;
Hsu, Yu-Kuei
;
Wang, Chih-Chia
;
Chang, Chen-Shiung
A new Schottky diode, Al/p-GaSe, was presented in this study. It shows an effective barrier height of 0.96 eV with an ideality factor of 1.24 over five decades and a reverse leakage current density of 4.12 x 10(-7) A/cm(2) at -2 V after rapid thermal annealing at 400 degrees C for 30 s. The generation-recombination effect of the Schottky diode was decreased as the annealing temperature was increased. The formation of Al1.33Se2 was observed by X-ray diffraction analysis after the diode was annealed at 400 degrees C for 30 s. Owing to the grains' growth, the surface morphology of the 400 degrees C-annealed diode was rougher than that of the unannealed diode, which was observed both by the AFM and the SEM analysis. (c) 2006 Elsevier Ltd. All rights reserved.
The contact characteristics of Al p-GaSe Schottky diode
(2008)
Huang, Wen-Chang
;
Horng, Chia-Tsung
;
Chen, Yu-Min
;
Hsu, Yu-Kuei
;
Chang, Chen-Shiung
The Schottky barrier characteristics of Al on a Bridgman grown p-GaSe layered semiconductor have been investigated using current voltage temperature (I-V-T) characteristics over a temperature range of 198 K 373 K. The forward I-V-T data reveals decrease at the barrier height but an increase at the ideality factor with decreasing in measurement temperature. For the 300 degrees C annealed diode, the barrier height decreased from 1.04 eV to 0.6eV and the ideality increased from 1.4 to 2.4, as the temperature decreased from 37.3 K to 198 K. The Richardson plot showed activation energy of 0.26 eV at high temperature region while showed a lower energy of 0.07eV at low temperature region. (C) 2008 WILEY-VCH Verlag GmbH & Co, KGaA, Weinheim.