Browsing by Author "Huang, Yu-Hsiang"

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Characterization of Temporary Bonding and Laser Release Using Polyimide and a 300-nm Photolysis Polymer System for High-Throughput 3-D IC Applications
(2017-03)
Cheng, Chuan-An
;
Tsai, Tsung-Yen
;
Huang, Yu-Hsiang
;
Lin, Chien-Hung
;
Lee, Chia-Lin
A new temporary bonding technology with an ultrafast laser-release process of less than 20 s is presented, where a 300-nm-thick photolysis polymer and polyimide are served as the release layer and adhesive layer, respectively. The submicrometer-thick polymer has the feature of high absorption of a 355-nm laser in contrast to polyimide during debonding procedures. In addition, the thin release layers of high chemical resistance and mechanical strength demonstrate their feasibility for handling process. Electrical characteristics of the devices before and after the laser-release process are investigated, showing no degradation. Thus, this technology scheme demonstrates its potential for temporary bonding and release in 3-D integration applications.
Characterizations of Ga-doped ZnO films on Si (111) prepared by atmospheric pressure metal-organic chemical vapor deposition
(2009-11-01)
Huang, Yen-Chin
;
Li, Zhen-Yu
;
Weng, Li-Wei
;
Uen, Wu-Yih
;
Lan, Shan-Ming
Gallium-doped ZnO films were grown on p-Si(111) substrates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water as reactant gases and triethyl gallium (TEG) as a n-type dopant gas. The structural, electrical, and optical properties of ZnO:Ga films obtained by varying the flow rate of TEG from 0.56 to 3.35 mu mol/min were examined. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga doping plays a role in forming microstructures in ZnO films. A flat surface with a predominant orientation (101) was obtained for the ZnO:Ga film fabricated at a flow rate of TEG = 2.79 mu mol/min. This film also revealed a lowest resistivity of 4.54 x 10(-4) Omega cm, as measured using the van der Pauw method. Moreover, low temperature photoluminescence (PL) emission recorded at 12 K demonstrated the Burstein Moss shift of PL line from 3.365 to 3.403 eV and a line broadening from 100 to 165 meV as the TEG flow rate varied from 0.56 to 2.79 mu mol/min. This blueshift behavior of PL spectra from ZnO: Ga films features the degeneracy of semiconductor, which helps to recognize the enhancing of transparency and conductivity of ZnO films fabricated by AP-MOCVD using Ga-doping technique. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3212895]
Characterizations of gallium-doped ZnO films on glass substrate prepared by atmospheric pressure metal-organic chemical vapor deposition
(2009-07-31)
Huang, Yen-Chin
;
Li, Zhen-Yu
;
Chen, Hung-hsin
;
Uen, Wu-Yih
;
Lan, Shan-Ming
Ga-doped zinc oxide (ZnO:Ga) films were grown on glass substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water as reactant gases and triethyl gallium (TEG) as an n-type dopant gas. The structural, electrical and optical properties of ZnO:Ga films obtained at various flow rates of TEG ranging from 1.5 to 10 sccm were investigated. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga-doping plays an important role in forming microstructures in ZnO films. A smooth surface with a predominant orientation of (101) was obtained for the ZnO:Ga film grown at a flow rate of TEG=7.5 sccm. Moreover, a lowest resistivity of 3.6 x 10(-4) Omega cm and a highest mobility of 30.4 cm(2) V(-1) s(-1) were presented by the same sample, as evaluated by Hall measurement. Otherwise. as the flow rate of TEG was increased, the average transmittance of ZnO:Ga films increased from 75% to more than 85% in the wavelength range of 400-800 nm, simultaneously with a blue-shift in the absorption edge. The results obtained suggest that low-resistivity and high-transparency ZnO films can be obtained by AP-MOCVD using Ga-doping sufficiently to make the films grow degenerate and effect the Burstein-Moss shift to raise the band-gap energy from 3.26 to 3.71 eV. (C) 2009 Elsevier B.V. All rights reserved.
CIGS solar cell integrated with high mobility microcrystalline Si TFTs on 30X40 cm(2) glass panels for self powered electronics
(2012-01-01)
Shen, Chang-Hong
;
Shieh, Jia-Min
;
Wu, Tsung-Ta
;
Huang, Jung Y.
;
Huang, Che-Hsuan
For the first time, we report a novel self-powered TFT panel (30X40cm(2)) by integration of sputtering/non-toxic Se vapor selenization copper-indium-gallium-selenide (CIGS) solar cell (conversion efficiency of 8%) and high electron-mobility (172 cm(2)/V-s) micro-crystalline (mu c)-Si TFTs.
Fabrication of whitely luminescent silicon-rich nitride films by atmospheric pressure chemical vapor deposition
(2008-06-01)
Lin, Chia-Hung
;
Uen, Wu-Yih
;
Huang, Yen-Chin
;
Li, Zhen-Yu
;
Liao, Sen-Mao
Silicon-rich nitride (SRN) films that can exhibit an intense white-light emission were fabricated by atmospheric pressure chemical vapor deposition. SRN films were deposited on Si substrates using gaseous SiH(2)Cl(2) (DCS) and NH(3) as the source materials for Si and N, respectively. The deposition temperature was kept at 850 degrees C, and H(2) was used as the carrier gas with its flow rate modulated to maintain chamber pressure at 1 atm during the deposition. The optical properties of films obtained at various deposition times from 15 to 60 min were examined by photoluminescence (PL) measurement. An intense luminescence band (1.5-3.5 eV) was observed by the naked eye for all as-deposited samples. Besides, time-resolved PL exhibited a short radiative lifetime of about 1 ns for SRN films. Moreover, high resolution plan-view transmission electron microscopy demonstrated the existence of Si dots in SRN films with the dot sizes ranging from 2 to 6 nm and a dot density of about 4 x 10(12)/cm(2). On the basis of the results obtained, we considered that the related luminescence mechanism for SRN films is connected to crystalline Si dots produced therein.
Feasibility Investigation of Amorphous Silicon as Release Layer in Temporary Bonding for 3-D Integration and FOWLP Scheme
(2017-03-01)
Cheng, Chuan-An
;
Huang, Yu-Hsiang
;
Lin, Chien-Hung
;
Lee, Chia-Lin
;
Yang, Shan-Chun
A reliable temporary bonding scheme with both inorganic amorphous silicon release layer and HD-3007 polyimide based on high 355-nm-wavelength laser absorption coefficient in release layer is proposed and investigated. Effects of laser absorption coefficient and laser ablation path are also studied to develop a high throughput laser ablation process. The bonding scheme can be achieved within the optimized temperature of 210 degrees C under 1 MPa bonding force. In addition, chemical resistance, mechanical strength with reliability assessment, and thermal stability test for bonded structure are inspected. There is no obvious degradation in electrical characterization after laser ablation, indicating that the temporary bonding scheme has high potential to be used for 3-D integration applications.
Growth of InN on Si (111) by atmospheric-pressure metal-organic chemical vapor deposition using InN/AlN double-buffer layers
(2008-07-01)
Li, Zhen-Yu
;
Lan, Shan-Ming
;
Uen, Wu-Yih
;
Chen, Ying-Ru
;
Chen, Meng-Chu
Indium nitride (InN) epilayers have been successfully grown on Si (111) substrates with low-temperature (450 degrees C) grown InN and high-temperature (1050 degrees C) grown AlN (InN/AlN) double-buffer layers by atmospheric-pressure metal-organic chemical vapor deposition (AP-MOCVD). X-ray diffraction characterizations indicated that highly (0001)-oriented hexagonal InN was grown on Si (111) substrate. Photoluminescence (PL) analyses performed at room temperature showed a strong emission at 0.72 eV with a full width at half maximum of 121 meV. Excitation intensity dependent measurements demonstrated the PL mechanism to be the band-to-band transition. Time-resolved PL could be fitted by a single exponential exhibiting an ordered film and a recombination lifetime of around 0.85 ns. In particular, transmission electron microscopy characterizations indicated that the use of AlN first buffer is very important to achieve a structurally uniform (0001)-oriented InN epilayer on Si (111) by AP-MOCVD. (C) 2008 American Vacuum Society.
Intrinsic p-type ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition
(2010-11-01)
Huang, Yen-Chin
;
Li, Zhen-Yu
;
Weng, Li-Wei
;
Uen, Wu-Yih
;
Lan, Shan-Ming
The structural, electrical, and optical properties of ZnO films fabricated by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) under various gas flow ratios of [H(2)O]/[DEZn] (VI/II ratio) ranging from 0.55 to 2.74 were systematically examined. Hall effect measurements exhibited an evident effect of the VI/II ratio on the conduction type of the intrinsic films. An n-type film was fabricated at the VI/II ratio=0.55; however, p-type ZnO films with the hole concentration of the order of 10(17) cm(-3) could be achieved at VI/II ratios higher than 1.0. In particular, the highest mobility of 91.6 cm(2)/V s and the lowest resistivity of 0.369 Omega cm have been achieved for the specimen fabricated at the VI/II ratio=1.10. Moreover, room-temperature photoluminescence (PL) measurements demonstrated an interstitial Zn (Zn(i)) donor defect related emission at 2.9 eV for the n-type film, while a Zn vacancy (V(Zn)) acceptor defect related one at 3.09 eV for the p-type films. The existence of material intrinsic defects was further confirmed by low temperature PL measurements conducted at 10 K. Conclusively, the conduction type of undoped ZnO films deposited by AP-MOCVD is resolved by the VI/II ratio used, which causes the formation of various kinds of intrinsic defects, Zn(i) otherwise VZn. p-type ZnO films with the hole concentration in the range of (1.5-3.3) x 10(17) cm(-3) can be achieved with good reproducibility by modulating a VI/II ratio the range 1.0-2.2 for the AP-MOCVD process. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3484138]
Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N(2) and H(2) atmospheres
(2009-03-01)
Lin, Chia-Hung
;
Uen, Wu-Yih
;
Lan, Shan-Ming
;
Huang, Yen-Chin
;
Liao, Sen-Mao
This work examines possible luminescence mechanisms of silicon-rich nitride (SRN) films that were fabricated by atmospheric pressure chemical vapor deposition (APCVD). Under an ambient gas of either H(2) or N(2), two SRN films were deposited using the same precursors of Si and N. While photoluminescence (PL) measurements of both as-deposited specimens revealed an intense luminescence band (1.8-3.8 eV), which was observable by the naked eye, a detailed examination of the high energy band of the PL spectra over 2.8 eV yielded different results for those samples that were fabricated in different ambiences. To determine the reason for these differences, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy were conducted, suggesting unique chemical bonds and elemental ratio of nitrogen to silicon in SRN films. Further analysis involving plan-view high-resolution transmission electron microscopic observations of SRN films demonstrated the embedding of Si quantum dots (Si QDs), but with some differences depending on the deposition environment. Analyses of the results obtained suggest that the emission from SRN films that were deposited by APCVD is not only dominated by the quantum confinement effect of Si QDs, but also subordinately affected by the surface states around these Si QDs.
Luminescence mechanisms of silicon-rich nitride films fabricated by atmospheric pressure chemical vapor deposition in N-2 and H-2 atmospheres
(2009-03-01)
Lin, Chia-Hung
;
Uen, Wu-Yih
;
Lan, Shan-Ming
;
Huang, Yen-Chin
;
Liao, Sen-Mao
This work examines possible luminescence mechanisms of silicon-rich nitride (SRN) films that were fabricated by atmospheric pressure chemical vapor deposition (APCVD). Under an ambient gas of either H-2 or N-2, two SRN films were deposited using the same precursors of Si and N. While photoluminescence (PL) measurements of both as-deposited specimens revealed an intense luminescence band (1.8-3.8 eV), which was observable by the naked eye, a detailed examination of the high energy band of the PL spectra over 2.8 eV yielded different results for those samples that were fabricated in different ambiences. To determine the reason for these differences, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy were conducted, suggesting unique chemical bonds and elemental ratio of nitrogen to silicon in SRN films. Further analysis involving plan-view high-resolution transmission electron microscopic observations of SRN films demonstrated the embedding of Si quantum dots (Si QDs), but with some differences depending on the deposition environment. Analyses of the results obtained suggest that the emission from SRN films that were deposited by APCVD is not only dominated by the quantum confinement effect of Si QDs, but also subordinately affected by the surface states around these Si QDs.
Study of a Novel Amorphous Silicon Temporary Bonding and Corresponding Laser Assisted De-bonding Technology
(2016)
Huang, Yu-Hsiang
;
Liang, Hao-Wen
;
Cheng, Chuan-An
;
Lin, Chien-Hung
;
Lee, Chia-Lin
A novel amorphous silicon temporary bonding and corresponding laser assisted de-bonding technology are investigated for the improvement of 3D integration. Excellent bonding results with real device wafer with alpha-IGZO thin-film transistor are shown at the bonding temperature of 210 degrees C, as well as outstanding performances for bonding strength, thermal stability, reliability and chemical resistance. Laser ablated amorphous silicon is proved stable and ultra-fast. Advantages of excellent bonding quality, lower cost and higher throughput demonstrate that this scheme can be a potential candidate in 3D integration platform.
Time Synchronization Protocol for Small-Scale Wireless Sensor Networks
(2010)
Huang, Yu-Hsiang
;
Wu, Sau-Hsuan
;
電信工程研究所
;
Institute of Communications Engineering
A Round-Robin Timing Exchange (RRTE) protocol is proposed for the distributed synchronization of wireless sensor network. Compared to the Timing-sync Protocol for Sensor Network (TPSN) and the Pairwise Broadcasting Synchronization (PBS) scheme, the power consumption for each sensor node (SN) of RRTE is much smaller than that of TPSN and is evenly distributed among each SN in contrast to the PBS method. In addition, the synchronization accuracy of RRTE falls within that of TPSN and PBS, and can be adjusted by controlling the number of SNs in one cycle of synchronization. This makes the synchronization protocol particularly useful for small-scale wireless sensor networks. Furthermore, to improve the accuracy of synchronization, a recursive second-order regression method is also proposed to smooth the timing adjustment of each synchronization step without requiring complicated computations.
Wafer-Level MOSFET with Submicron Photolysis Polymer Temporary Bonding Technology Using Ultra-Fast Laser Ablation for 3DIC Application
(2016)
Cheng, Chuan-An
;
Huang, Yu-Hsiang
;
Lin, Chicn-Hung
;
Lee, Chia-Lin
;
Yang, Shan-Chun
A submicron photolysis polymer temporary bonding with ultra-fast laser de-bonding process of less than 20 s has been demonstrated where both photolysis polymer and polyimide are served as release layer and adhesive layer, respectively. In addition, the bonded structure provides high chemical resistance and mechanical strength for handling process. By measuring the electrical characteristics of devices before and after de-bond, it shows promising performance without degradation. Thus it can be a potential candidate for temporary bonding and de-bonding in 3D integration.