Browsing by Author "Huang-Choung"

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Interconnect of group III-V semiconductor device and fabrication method for making the same
(2010-12-07)
Lee
;
Cheng-Shih
;
Chang
;
Edward Yi
;
Chang
An interconnect of the group III-V semiconductor device and the fabrication method for making the same are described. The interconnect includes a first adhesion layer, a diffusion barrier layer for preventing the copper from diffusing, a second adhesion layer and a copper wire line. Because a stacked-layer structure of the first adhesion layer/diffusion barrier layer/second adhesion layer is located between the copper wire line and the group III-V semiconductor device, the adhesion between the diffusion barrier layer and other materials is improved. Therefore, the yield of the device is increased.