Browsing by Author "Hung, BF"

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A novel program-erasable high-(K) A1N-Si MIS capacitor
(2005-03-01)
Lai, CH
;
Chin, A
;
Hung, BF
;
Cheng, CF
;
Yoo, WJ
We demonstrate a programmable-erasable MIS capacitor with a single layer high-kappa AIN dielectric on Si having a high capacitance density of 5 fF/mum(2). It has low program and erase voltages of +4 and -4 V, respectively. Such an erase function is not available in other single layer Al2O3, AION, or other known high-kappa dielectric capacitors, where the threshold voltage (T h) shifts continuously with voltage. This device exhibits good data retention with a V-th change of only 0.06 V after 10 000 s.
HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
(2006-06-01)
Wu, CH
;
Hung, BF
;
Chin, A
;
Wang, SJ
;
Yen, FY
The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAION gate dielectric with a 1.7-nm EOT. After a 600 degrees C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm(2)/V(.)s. They have additional merit of a process compatible with current very large scale integration fabrication lines.
High performance CPW and microstrip ring resonators on silicon substrates
(2004-09-20)
Chen, CC
;
Hung, BF
;
Chin, A
;
McAlister, SP
;
電子工程學系及電子研究所
High performance CPW and novel microstrip ring resonators at similar to30 GHz and 40 GHz have been fabricated on Si substrates, using an optimized proton-implantation process. Very good insertion loss and resonator characteristics, close to those from ideal electromagnetic simulations, were measured. In contrast, the ring resonators on VLSI-standard Si, without implantation, have worse transmission and reflection loss, thus prohibiting applications in RF circuits. (C) 2004 Wiley Periodicals, Inc.
High-performance bulk and thin-film microstrip transmission lines on VLSI-standard Si substrates
(2004-10-20)
Chen, CC
;
Hung, BF
;
Chin, A
;
McAlister, SP
;
電子工程學系及電子研究所
Microstrip transmission lines with very low power loss of 0.4 dB/mm at 50 GHz have been fabricated on Si substrates using an optimized ion-implantation process. These devices have the inherent advantages of smaller chip Size and better power performance than CPW lines. Using the same approach, high-performance thin-film microstrip lines are also developed, showing a loss of 0.9 dB/mm at 20 GHz. This approach is compatible with existing VLSI backend layout technology. (C) 2004 Wiley Periodicals, Inc.
High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectric
(2005-06-01)
Hung, BF
;
Chiang, KC
;
Huang, CC
;
Chin, A
;
McAlister, SP
We have integrated a high-κ, LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved-such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-κ dielectric.
High-performance RSD poly-Si TFTs with a new ONO gate dielectric
(2004-06-01)
Chang, KM
;
Yang, WC
;
Hung, BF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series resistance. These features were used to fabricate high-performance RSD-TFTs with ONO gate dielectric. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time dependent dielectric breakdown, larger QBD, and a lower charge-trapping rate than single-layer plasma-enhanced chemical vapor deposition tetraethooxysilane oxide or nitride. The fabricated RSD-TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 320 cm(2) /V . s, and an on/off current ratio exceeding 10(8).
High-performance RSD poly-Si TFTs with a new ONO gate dielectric
(2004-06-01)
Chang, KM
;
Yang, WC
;
Hung, BF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper developed a novel polycrystalline silicon (poly-Si) thin-film transistor (TFT) structure with the special features: 1) a new oxide-nitride-oxynitride (ONO) multilayer gate dielectric to reduce leakage current, improved breakdown characteristics, and enhanced reliability; and 2) raised source/drain (RSD) structure to reduce series resistance. These features were used to fabricate high-performance RSD-TFTs with ONO gate dielectric. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time dependent dielectric breakdown, larger QBD, and a lower charge-trapping rate than single-layer plasma-enhanced chemical vapor deposition tetraethooxysilane oxide or nitride. The fabricated RSD-TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 320 cm(2) /V . s, and an on/off current ratio exceeding 10(8).
Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference
(2005)
Yu, DS
;
Chin, A
;
Wu, CH
;
Li, MF
;
Zhu, C
Metallic diffusion through high-K HfO(2), caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (phi(m,eff)) of 4.25 and 5.15 eV are obtained in TaTb(0.2)N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual phi(m,eff) of 4.15 and 4.9 eV are also obtained in Yb(x)Si/HfAlON and Ir(x)Si/HfAlON FUSI-gates by reduced metal diffusion at lower temperature.
Low noise and high gain RF MOSFETs on plastic substrates
(2005)
Kao, HL
;
Chin, A
;
Huang, CC
;
Hung, BF
;
Chiang, KC
A low minimum noise figure (NFmin) of 1.2 dB and high associated gain of 12.8 dB at 10 GHz, were measured for 0.18 mu m RF MOSFETs on plastic, made by substrate thinning (similar to 30 mu m), transfer and bonding. The performance can be further improved to 0.96 dB NFmin and 14.1 dB associated gain at 10 GHz, under applied tensile strain, using flexible Si on plastic. A 3.5 nH inductor on plastic showed a 55% higher Q-factor with a wider frequency range, compared with that on a Si substrate.
Low noise RF MOSFETs on flexible plastic substrates
(2005-07-01)
Kao, HL
;
Chin, A
;
Hung, BF
;
Lee, CF
;
Lai, JM
We report a low minimum noise figure (NFmin) of 1.1 dB and high associated gain (12 dB at 10 GHz) for 16 gate-finger 0.18-mu m RF MOSFETs, after thinning down the Si substrate to 30 mu m and mounting it on plastic. The device performance was improved by flexing the substrate to create stress, which produced a 25% enhancement of the saturation drain current and lowered NFmin to 0.92 dB at 10 GHz. These excellent results for mechanically strained RF MOSFETs on plastic compare well with 0.13-mu m node (L-g = 80 nm) devices.
Low-temperature poly-Si thin-film transistor with a N2O-plasma ONO multilayer gate dielectric
(2004)
Chang, KM
;
Yang, WC
;
Hung, BF
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
High-performance polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with oxide/nitride/oxynitride (ONO) multilayer gate dielectrics were fabricated. The low-temperature (less than or equal to300degreesC) ONO multilayer dielectric uses three stacked layers: the bottom layer is a very thin N2O-plasma oxynitride deposited by plasma-enhanced chemical vapor deposition (PECVD), the middle layer is PECVD Si3N4, and the top layer is tetraethoxysilane (TEOS) oxide. The ONO gate dielectric on poly-Si films shows a very high breakdown field of 9.4 MV/cm, a longer time-dependent dielectric breakdown lifetime and a lower charge trapping rate than single-layer PECVD TEOS oxide or nitride. The fabricated poly-Si TFTs with ONO gate dielectric exhibited excellent transfer characteristics, high field-effect mobility of 213 cm(2)/V s, and an ON/OFF current ratio of over 10(8). (C) 2004 The Electrochemical Society.
Strain-induced very low noise RF MOSFETs on flexible plastic substrate
(2005)
Kao, HL
;
Chin, A
;
Hung, BF
;
Lai, JM
;
Lee, CF
Using microstrip line design to screen substrate resistance generated RF noise, very low 1.1 dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18 mu m MOSFET on plastic without de-embedding. The die on plastic was thinned to 30 mu m that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13 mu m and 90nm nodes MOSFETs.
The changing effect of N-2/O-2 gas flow rate ratios on ultrathin nitrogen-enriched oxynitride gate dielectrics
(2004)
Chang, KM
;
Yang, WC
;
Chen, CF
;
Hung, BF
;
電子工程學系及電子研究所
We report the growth of an ultrathin 1.0 nm (equivalent oxide thickness = 0.86 nm) oxynitride gate dielectric by rapid thermal processing (RTP) in high-N-2 but low-O-2 gas flow ambient. The effect of the changing N-2/O-2 gas flow ratio on the characteristics of oxynitride films was investigated. High-quality oxynitride film could be formed by RTP in an optimum N-2/O-2 gas flow ratio of 5/1. Detailed characterization (transmission electron microscopy, J-E capacitance-voltage, stress-induced leakage current, charge-trapping properties! demonstrated the high quality of the oxynitride dielectric and showed that low leakage current density J(g) = 0.1 A/cm(2) at 1 V, was 1.85 orders of magnitude lower than that of SiO2. These improvements are attributed to the presence of nitrogen at the interface and in the bulk of the oxynitride. (C) 2004 The Electrochemical Society.
Very high kappa and high density TiTaO MIM capacitors for analog and RF applications
(2005)
Chiang, KC
;
Chin, A
;
Lai, CH
;
Chen, WJ
;
Cheng, CF
For the first time, high density (10.3 fF/mu m(2)), low voltage linearity (alpha = 89 ppm/V-2) and small leakage current (1.2 x 10(-8) A/cm(2) or 5.8 fA/[pF circle V] at 2V) meet all the ITRS requirements of analog capacitor at year 2018. These are achieved by novel high-kappa TiTaO (kappa = 45) and high work-function Ir capacitor, which further improve to very high 23 fF/mu m(2) density and low 81 ppm/V-2 linearity for higher speed analog/RF ICs at 1 GHz, using the fast a decay mechanism with increasing frequency.
Very low noise RIF nMOSFETs on plastic by substrate thinning and wafer transfer
(2005-11-01)
Kao, HL
;
Hung, BF
;
Chin, A
;
Lai, JM
;
Lee, CF
A very low minimum noise figure (NFmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-mu m radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (similar to 30 mu m) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NFmin anda 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.