Browsing by Author "Hwang, Chi-Hong"

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Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain
(2012-06-01)
Li, Yiming
;
Cheng, Hui-Wen
;
Hwang, Chi-Hong
;
電機資訊學士班
;
Undergraduate Honors Program of Electrical Engineering and Computer Science
The random work-function (WK) induced threshold voltage fluctuation (sigma V-th) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigma V-th are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques.