Browsing by Author "Jeng, JN"

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Effect of processing temperature on polysilicon thin-film transistors with liquid-phase deposited oxide as gate insulator
(1997)
Yeh, CF
;
Chen, TJ
;
Jeng, JN
;
交大名義發表
;
電子工程學系及電子研究所
Liquid-phase deposited (LPD) oxide has been successfully applied as gate insulator to low-temperature processed polysilicon thin-film transistors (poly-Si TFTs). This paper assesses the feasibility of applying LPD oxide to high-temperature processed (HTP) TFTs. The high-temperature treatments like gate-oxide annealing and dopant activation provide excellent improvement in the characteristics of poly-Si TFTs with LPD gate oxides. These high-temperature treated devices show effective hydrogenation using the NH3 plasma treatment. The results imply that novel LPD gate oxide technologies can lead to replacement of thermal gate oxide with HTP poly Si TFTs. The reliability of HTP poly-Si TFTs with LPD gate oxides was also investigated.
Effects of process temperature on polysilicon thin film transistors with liquid-phase deposited oxides as gate insulators
(1997-10-01)
Yeh, CF
;
Chen, TJ
;
Jeng, JN
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Liquid-phase deposited (LPD) oxide has previously been successfully applied to low temperature processed polysilicon thin film transistors (poly-Si TFTs) as a gate insulator. This paper shows the feasibility of applying room temperature deposited LPD oxide to high temperature processed devices. The thermal effects of high temperature processing on poly-Si TFTs including postoxide annealing and dopant activation have been investigated. These high temperature treatments show excellent improvement in device characteristics. In addition, the novel devices also show considerably more efficient hydrogenation during NH3-plasma treatment, and their reliability under de electrical stress appears similar to that of conventional poly-Si TFTs.