Browsing by Author "Jhou, K. Y."

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High density and low leakage current in TiO(2) MIM capacitors processed at 300 degrees C
(2008-08-01)
Cheng, C. H.
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Lin, S. H.
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Jhou, K. Y.
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Chen, W. J.
;
Chou, C. P.
We report Ir/TiO(2)/TaN metal-insulator-metal capacitors processed at only 300 degrees C, which show a capacitance density of 28 fF/mu m(2) and a leakage current of 3 x 10(-8) (25 degrees C) or 6 x 10(-7) (125 degrees C) A/cm(2) at -1 V. This performance is due to the combined effects of 300 degrees C nanocrystallized high-kappa, TiO(2), a high conduction band offset, and high work-function upper electrode. These devices show potential for integration in future very-large-scale-integration technologies.
Use of a high-work-function ni electrode to improve the stress reliability of Analog SrTiO3 metal-insulator-metal capacitors
(2007-08-01)
Chiang, K. C.
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Cheng, C. H.
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Jhou, K. Y.
;
Pan, H. C.
;
Hsiao, C. N.
We have studied the stress reliability of low-energy-bandgap high-kappa. SrTiO3 metal-insulator-metal capacitors under constant voltage stress. By using a high-work-function Ni electrode (5.1 eV), we reduced the degrading effects of stress on the capacitance variation (Delta C/C), the quadratic voltage coefficient of capacitance (VCC-alpha), and the long-term reliability, in contrast with using a TaN. The improved stress reliability for the Ni electrode capacitors is attributed to a reduction of carrier injection and trapping.