Browsing by Author "Jou, Shyh-Jye"

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10Gbps Decision Feedback Equalizer with Dynamic Lookahead Decision Loop
(2009)
Lin, Yu-Chun
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Shiue, Muh-Tian
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Jou, Shyh-Jye
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Decision feedback equalizer (DFE) uses a feedback path to cancel post-cursor IS!, and this feedback path will also cause the limitation of its maximum throughput rate. This paper proposes a new lookahead method to break the feedback path for multi-gigabit DFE design. After lookahead computation, each paralleled sub-circuit has the same throughput rate as original one. Therefore, the total throughput rate is proportional to the parallelization factor. The computation complexity of the proposed architecture is lower than that of multiplexer-based lookahead DFE if the tap number of the feedback filter is large. It is shown that the new method saves 10% hardware complexity for an 8 taps feedback filter DFE and 98% hardware complexity for a 12 taps feedback filter DFE in comparison to a 10Gbps multiplexer-based lookahead DFE.
40 nm Bit-Interleaving 12T Subthreshold SRAM With Data-Aware Write-Assist
(2014-09-01)
Chiu, Yi-Wei
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Hu, Yu-Hao
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Tu, Ming-Hsien
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Zhao, Jun-Kai
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Chu, Yuan-Hua
This paper presents a new bit-interleaving 12T sub-threshold SRAM cell with Data-Aware Power-Cutoff (DAPC) Write-assist to improve the Write-ability to mitigate increased device variations at low supply voltage under deep sub-100 nm processes. The disturb-free feature facilitates the bit-interleaving architecture that can reduce multiple-bit errors in a single word and enhance soft error immunity by employing error checking and correction (ECC) techniques. The proposed 12T SRAM cell is demonstrated by a 4 kb SRAM macro implemented in 40 nm general purpose (40GP) CMOS technology. The test chip operates from typical V-DD to 350 mV (similar to 100 mV lower than the threshold voltage) with V-DDMIN limited by Read operation. Data can be written successfully for V-DD down to 300 mV. The measured maximum operation frequency is 11.5 MHz with total power consumption of 22 mu W at 350 mV, 25 degrees C.
A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist
(2015-05-01)
Lu, Chien-Yu
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Chuang, Ching-Te
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Jou, Shyh-Jye
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Tu, Ming-Hsien
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Wu, Ya-Ping
This brief presents a two-port disturb-free 9T subthreshold static random access memory (SRAM) cell with independent single-ended read bitline and write bitline (WBL) and cross-point data-aware write structure to facilitate robust subthreshold operation and bit-interleaving architecture for enhanced soft error immunity. The design employs a variation-tolerant line-up write-assist scheme where the timing of area-efficient boosted write wordline and negative WBL are aligned and triggered/initiated by the same low-going global WBL to maximize the write-ability enhancement. A 72-kb test chip is implemented in United Microelectronics Corp. 40-nm low-power (40LP) CMOS. Full functionality is achieved for V-DD ranging from 1.5 to 0.32 V without redundancy. The measured maximum operation frequency is 260 MHz (450 kHz) at 1.1 V (0.32 V) and 25 degrees C. At 0.325 V and 25 degrees C, the chip operates at 600 kHz with 5.78 mu W total power and 4.69 mu W leakage power, offering 2x frequency improvement compared with 300 kHz of our previous 72-kb 9T subthreshold SRAM design in the same 40LP technology. The energy efficiency (power/frequency/IO) at 0.325 V and 25 degrees C is 0.267 pJ/bit, a 23.7% improvement over the 0.350 pJ/bit of our previous design.
A 0.33-V, 500-kHz, 3.94-mu W 40-nm 72-Kb 9T Subthreshold SRAM With Ripple Bit-Line Structure and Negative Bit-Line Write-Assist
(2012-12-01)
Lu, Chien-Yu
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Tu, Ming-Hsien
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Yang, Hao-I
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Wu, Ya-Ping
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Huang, Huan-Shun
This paper presents an ultra-low-power 72-Kb 9T static random-access memory (SRAM) with a ripple bit-line (RPBL) structure and negative bit-line (NBL) write-assist. The RPBL scheme provides over 40% read access performance improvement for VDD below 0.4 V compared with the conventional hierarchical bit-line structure. A variation-tolerant ripple-initiated NBL write-assist scheme with the transient negative pulse coupled only into the single selected local bit-line segment is employed to enhance the NBL, boosting efficiency and reducing power consumption. The 331 x 385 mu m(2) 72-Kb SRAM macro has been fabricated in UMC 40-nm low-power CMOS technology and was tested with full suites of SRAM compiler qualification patterns. Error-free full functionality without redundancy is achieved from 1.5 V down to 0.33 V. The measured maximum operation frequency is 220 MHz (500 kHz) at 1.1 V (0.33 V) and 25 degrees C. The measured total power consumption is 3.94 mu W at 0.33 V, 500 kHz, and 25 degrees C.
A 0.92mm(2) 23.4mW Fully-Compliant CTC Decoder for WiMAX 802.16e Application
(2009)
Yen, Shao-Wei
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Hu, Ming-Chih
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Chen, Chih-Lung
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Chang, Hsie-Chia
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Jou, Shyh-Jye
An area-efficient and fully-compliant decoder for convolutional turbo code (CTC) of WiMAX 802.16e is presented. The proposed decoder can support all 17 modes specified in IEEE 802.16e system. By scaling the extrinsic information, the Max-Log MAP algorithm is used to reduce the hardware complexity with the minimized performance loss. A two-phase extrinsic memory and reversed sliding window technique are demonstrated for less memory requirement and decoding latency. Moreover, a division-free reconfigurable interleaver architecture is implemented by simple addition and subtraction instead of division. Fabricated with the 90nm CMOS process, the proposed CTC decoder chip which occupies core area of 0.92mm(2) can achieve 30Mb/s with 23.4mW power consumption.
A 10-Gb/s, 1.24 pJ/bit, Burst-Mode Clock and Data Recovery With Jitter Suppression
(2015-03-01)
Su, Ming-Chiuan
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Chen, Wei-Zen
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Wu, Pei-Si
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Chen, Yu-Hsiang
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Lee, Chao-Cheng
A burst mode clock and data recovery (BMCDR) circuit for 10 Gbps passive optical network (10G-PON) is presented. The proposed BMCDR is reconfigurable between data gating mode and phase tracking mode to achieve instantaneously phase-locked with jitter suppression capability. Incorporating selectively gating VCO (SGVCO), the BMCDR operates at 1/5-rate and accomplishes 1:5 demultiplexing with a high energy efficiency of 1.24 pJ/bit. With a 4 MHz, 0.22UI(pp) jitter stressed input data at 10 Gbps, the recovered clock jitter at 2 GHz is 2.94 ps(rms). The prototype is fabricated using 55 nm CMOS technology. The core area is 0.03 mm(2) only. It dissipates 12.4 mW from 1 V supply.
A 10Gbps, 1.24pJ/bit, Burst-Mode Clock and Data Recovery with Jitter Suppression
(2013-01-01)
Su, Ming-Chiuan
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Chen, Wei-Zen
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Wu, Pei-Si
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Chen, Yu-Hsian
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Lee, Chao-Cheng
A 10Gbps, 1/5-rate burst mode clock and data recovery (BMCDR) circuit is proposed. The BMCDR is reconfigurable between data gating mode and phase tracking mode to achieve instantaneous phase-locking with jitter suppression for 10 GPON. Incorporating a 1/5-rate CDR with 1: 5 demultiplexer, it achieves a high energy efficiency of 1.24pJ/bit. With a 4MHz, 0.22UI(pp) input data jitter, the recovered clock jitter at 2GHz is 2.94ps(rms). The prototype chip is fabricated in UMC 55nm CMOS technology. Chip size is 200x150 mu m(2).
A 28mW OFDM Baseband Receiver Chip for DVB-T/H with All Digital Synchronization
(2008)
Wei, Ting-Chen
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Liu, Wei-Chang
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Tseng, Chi-Yao
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Long, Syu-Siang
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Jou, Shyh-Jye
An OFDM baseband receiver chip for DVB-T/H application is proposed in this paper. With all-digital jointed detection/synchronization loops and channel estimation, the proposed receiver chip can compensate 200ppm sampling clock offset (SCO) and +/- 50 subcarrier spacing carrier frequency offset (CFO) in multipath environment The total memory requirement of this chip is 102.8KB and the total equivalent gate count (including memory) is about 806,800 gates. By using 0.18 mu m CMOS process, the power consumption is 28mW at 1.45 V, 40MHz and core size of this chip is 3600 mu m x 3600 mu m.
A 28nm 36kb High Speed 6T SRAM with Source Follower PMOS Read and Bit-Line Under-Drive
(2015)
Hong, Chi-Hao
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Chiu, Yi-Wei
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Zhao, Jun-Kai
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Jou, Shyh-Jye
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Wang, Wen-Tai
In this paper, we present source follower PMOS Read and bit-line under-drive techniques to improve the operation speed as compared to present commercial SRAM compilers. A source follower PMOS is utilized to connect local bit-lines (LBL) to global bit-lines (GBL) instead of using a NAND gate. To further improve the discharging time from LBL to GBL, we propose a bit-line under-drive circuit to reduce the voltage level of LBL. The simulated access time of the proposed macro is 445 ps at slow N slow P (SS) corner, -40 degrees C, 0.81 V. As compared to the SRAM macro which is generated by commercial SRAM compilers with the fastest combination, the access time of the proposed SRAM macro is 12% faster than that of commercial SRAM compilers. A 36kb high speed 6T SRAM macros with source follower PMOS Read and bit-line under-drive techniques is fabricated in 28nm HKMG CMOS process. The measurement results of the chip in SS corner show the proposed SRAM macro passes all MBIST patterns at 500 MHz at 0.81 V, room temperature.
A 3.52 Gb/s mmWave Baseband with Delayed Decision Feedback Sequence Estimation in 40 nm
(2015)
Preyss, Nicholas
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Senning, Christian
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Burg, Andreas
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Liu, Wei-Chang
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Liu, Chun-Yi
We present a digital baseband ASIC for 60 GHz single-carrier (SC) transmission that is optimized for communication scenarios in which most of the energy is concentrated in the first few channel taps. Such scenarios occur for example in office environments with strong reflections. Our circuit targets close-to-optimum maximum-likelihood performance under such conditions. To this end, we show for the first time how a reduced-state-sequence-estimation algorithm can be realized for the 1760 MHz bandwidth of the IEEE 802.11ad standard. The equalizer is complemented in the frontend by a synchronization unit for frequency offset compensation as well as a Golay-sequence based channel estimator and in the backend by an low density parity check (LDPC) decoder. In 40nm CMOS we achieve a measured data rate of up to 3.52 Gb/s using QPSK modulation.
A 40 nm 0.32 V 3.5 MHz 11T Single-Ended Bit-Interleaving Subthreshold SRAM with Data-Aware Write-Assist
(2013)
Chiu, Yi-Wei
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Hu, Yu-Hao
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Tu, Ming-Hsien
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Zhao, Jun-Kai
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Jou, Shyh-Jye
This paper presents a new bit-interleaving 11T subthreshold SRAM cell with Data-Aware Power-Cutoff (DAPC) Write-assist to mitigate the leakage and variation and improve the Write-ability in deep sub-100nm technology. Measurement results from a 4 Kb test chip implemented in 40 nm General Purpose (40GP) CMOS technology operates for V-DD down to 0.32 V (similar to 0.69X of threshold voltage) with V-DDMIN limited by Read operation. The measured maximum operation frequency is 3.5 MHz (16.5 MHz) at 0.32 V (0.38 V) with total power consumption of 15.2 mu W (27.2 mu W) at 25 degrees C.
A 40 nm 512 kb Cross-Point 8 T Pipeline SRAM With Binary Word-Line Boosting Control, Ripple Bit-Line and Adaptive Data-Aware Write-Assist
(2014-12-01)
Lien, Nan-Chun
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Chu, Li-Wei
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Chen, Chien-Hen
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Yang, Hao-I.
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Tu, Ming-Hsien
This paper presents a cross-point 512 kb 8 T pipeline static random-access memory (SRAM). The cross-point structure eliminates write half-select disturb to facilitate bit-interleaving architecture for enhanced soft error immunity. The design employs boosted word-line (WL) for improving both read performance and write-ability. A ripple bit-line (RiBL) structure provides 30%-44% read access performance improvement and 2x-3.5x variation immunity at 0.7 V compared with the conventional hierarchical bit-line (HiBL) schemes. An adaptive data-aware write-assist (ADAWA) with VCS tracking is employed to further enhance the write-ability while ensuring adequate stability for half-selected cells on the selected bit-lines. An adaptive voltage detector (AVD) with binary boosting control is used to mitigating gate electric over-stress. The design is implemented in UMC 40 nm low-power (40LP) CMOS technology. The 512 kb test chip operates from 1.5 V to 0.65 V, with maximum operation frequency of 800 MHz@1.1 V and 200 MHz@0.65 V. The measured power consumption is 0.5 mW/MHz (active) and 4.4 mW (standby) at 1.1 V, and 0.107 mW/MHz (active) and 0.367 mW (standby) at 0.65 V.
A 40nm 1.0Mb 6T Pipeline SRAM with Digital-Based Bit-Line Under-Drive, Three-Step-Up Word-Line, Adaptive Data-Aware Write-Assist with VCS Tracking and Adaptive Voltage Detector for Boosting Control
(2013-01-01)
Liao, Wei-Nan
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Lien, Nan-Chun
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Chang, Chi-Shin
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Chu, Li-Wei
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Yang, Hao-I
This paper presents a 40nm 1.0Mb pipeline 6T SRAM featuring digital-based Bit-Line Under-Drive (BLUD) with large-signal sensing and Three-Step-Up Word-Line (TSUWL) to improve RSNM, Read performance and Write-ability. An Adaptive DataAware Write-Assist (ADAWA) with VCS tracking is employed to further improve Write-ability while ensuring adequate stability for half-selected cells on the selected bit-lines. An Adaptive Voltage Detector (AVD) with binary boosting control is used to mitigate gate dielectric over-stress. The 1.0Mb test chip operates from 1.5V to 0.7V, with operating frequency of 1.07GHz@1.2V and 887MHz@1.1V at 25 degrees C. The measured power consumption is 43.47mW (Active)/3.91mW (Leakage) at 1.1V and 8.97mW (Active)/0.52mW (Leakage) at 0.7V, TT, 25 degrees C.
A 40nm 1.0Mb Pipeline 6T SRAM with Variation-Tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist
(2013)
Chang, Chi-Shin
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Yang, Hao-I
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Liao, Wei-Nan
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Lin, Yi-Wei
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Lien, Nan-Chun
We present a 1.0Mb pipeline 6T SRAM in 40nm Low-Power CMOS technology. The design employs a variation-tolerant Step-Up Word-Line (SUWL) to improve the Read Static Noise Margin (RSNM) without compromising the Read performance and Write-ability. The Write-ability is further enhanced by an Adaptive Data-Aware Write-Assist (ADAWA) scheme. The 1.0Mb test chip operates from 1.5V to 0.7V, with operating frequency of 800MHz@1.2V and 25 degrees C. The measured power consumption is 23.21mW (Active)/2.42mW (Leakage) at 1.2V, TT, 25 degrees C; and 6.01mW (Active)/0.35mW (Leakage) at 0.7V, TT, 25 degrees C.
A 5.79-Gb/s Energy-Efficient Multirate LDPC Codec Chip for IEEE 802.15.3c Applications
(2012-09-01)
Yen, Shao-Wei
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Hung, Shiang-Yu
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Chen, Chih-Lung
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Chang, Hsie-Chia
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Jou, Shyh-Jye
"An LDPC codec chip supporting four code rates of IEEE 802.15.3c applications is presented. After utilizing row-based layered scheduling, the normalized min-sum (NMS) algorithm can reduce half of the iteration number while maintaining similar performance. According to the unique code structure of the parity-check matrix, a reconfigurable 8/16/32-input sorter is designed to deal with LDPC codes in four different code rates. Both sorter input reallocation and pre-coded routing switch are proposed to alleviate routing complexity, leading to 64% input reduction of multiplexers. In addition, an adder-accumulator-shift register (AASR) circuit is proposed for the LDPC encoder to reduce hardware complexity. After implemented in 65-nm 1P10M CMOS process, the proposed LDPC decoder chip can achieve maximum 5.79-Gb/s throughput with the hardware efficiency of 3.7 Gb/s mm(2) and energy efficiency of 62.4 pJ/b, respectively."
A 50 Gb/s Adaptive Dual Data-Paths NS-EICL ADFE with 50 Parallelisms for 2-PAM Systems
(2019-01-01)
Ng, Chee-Kit
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Chiu, Kang-Lun
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Lin, Yu-Chun
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Jou, Shyh-Jye
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電子工程學系及電子研究所
A 50Gb/s all-digital adaptive noise-suppression (NS) feed-forward equalizer (AFFE) and adaptive decision feedback equalizer (ADFE) for 2-level pulse amplitude modulation (2-PAM) serial link systems is presented. Based on a parallel extended incremental coefficients-lookahead scheme (EICL), we propose a Dual Data-paths Self-Lookahead Filter (DD-SLF) for ADFE. DD-SLF architecture has better energy efficiency and hardware area than an original SLF architecture due to the number of delay elements in the feedback loop is reduced. Furthermore, gated clock technique with the design idea of register file architecture is used to replace the pipelined delay elements to save power. The whole equalizer which operates at 1GHz system clock rate with 50 parallelisms is implemented in 40nm CMOS technology with a 0.38mm(2) core area. The equalizer with 50Gb/s throughput rate achieves 2.6pJ/bit energy efficiency under 0.81V supply measurement results.
A 6Gbps serial link transmitter with pre-emphasis
(2007)
Chu, Chang-Min
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Chuang, Chih-Hua
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Lin, Chi-Hsien
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Jou, Shyh-Jye
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電子工程學系及電子研究所
In this paper, we propose a novel 6Gbps SATA transmitter. The transmitter is constructed by PISO, driver, pre-emphasis and PLL for a 1 similar to 5 meter cable. A test chip of transmitter with PLL and on-chip termination is implemented to verify the design methodology. The overall circuit is implemented in TSMC 0.18um 1P6M 1.8V CMOS process. The whole measured transmitter jitter is about 44ps and the power consumption is 68mW for 6Gbps case.
A 80-uW 2-Mb/s Transceiver for Human Body Channel Binaural Communication
(2012)
Sun, Jhih-Cing
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Chen, Jou-Ling
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Shen, Yi-Hung
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You, Shiu-Chain
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Jou, Shyh-Jye
We use a body channel and a low-power transceiver design to achieve binaural communication for hearing aids. The measured bandwidth of the body channel is 1 MHz to 7.5 MHz. The transmitter encodes and transmits data of 2-Mb/s and 1-V peak-to-peak square waveform to the electrodes connected to the body. The receiver includes an analog front end (AFE), an all-digital data recovery circuit and a decoder. This chip is implemented with a 65-nm CMOS process using 0.5-V supply in the digital transceiver and 1-V supply in the AFE. When working at 2 Mb/s, the power consumption is only 80 uW.
A 802.15.3c/802.11ad Compliant 24 Gb/s FFT Processor for 60 GHz Communication Systems
(2015)
Davila, Henry Lopez
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Liu, Chun-Yi
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Liu, Wei-Chang
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Huang, Shen-Jui
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Jou, Shyh-Jye
This paper, we present a 24 Gb/s 512-point 8X-parallel FFT processor for 60 GHz communication systems. The proposed design is a pipelined Multipath Delay Feedback (MDF) radix-2(3) architecture, which exploits the parallelism of the multipath scheme together with pipeline technique to achieve a high throughput rate. Besides, the proposed FFT processor is implemented with an area efficient optimized multiplier architecture that avoid the need to store the twiddle factor in memory and a dynamic scaling technique to enhance the SQNR, allowing the FFT to operate with 16-QAM and 64-QAM for single carrier (SC) and orthogonal frequency-division multiplexing(OFDM) schemes. This FFT processor has been implemented in a SC/OFDM dual-mode baseband receiver satisfying the requirements of the 802.15.3c/802.11ad standard with a 40nm CMOS process. The post-layout implementation results show that the proposed FFT processor is able to achieve up to 24 Gb/s throughput rate at 500MHz clock with a power consumption of 87mW and area of 0.64mm(2).
A 802.15.3c/802.11ad Dual Mode Phase Noise Cancellation for 60 GHz Communication Systems
(2015)
Huang, Liang-Yu
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Wu, Chia-Yi
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Liu, Chun-Yi
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Liu, Wei-Chang
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Wu, Chih-Feng
In this paper, a phase noise cancellation (PNC) architecture is presented for 60 GHz communication systems. The BER performance is severely degraded by the non-ideal carrier frequency in 60 GHz bandwidth, which causes both common phase error (CPE) and residual carrier frequency offset (RCFO). The proposed simplified two-stage CPE algorithm solves the RCFO and common phase nose in the frequency domain and eliminates the constellation rotation on each sub-channel. Two-stage architecture together with deep pipelining technique achieves a high throughput rate. This PNC architecture has been implemented in a SC/OFDM Dual-Mode baseband receiver satisfying the requirements of the 802.15.3c/802.11ad standard with a 40 nm process. The proposed PNC is able to support 64QAM/16QAM for OFDM/SC mode, and can achieve up to 19.2 Giga-hit per second (Gbps) throughput rate at 400 MHz operating frequency with power consumption of 33 mW and area of 0.142 mm(2).