Browsing by Author "Kao, C. H."

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Calibration 90 nm node RF mosfets, including stress degradation
(2007-03-01)
Kao, H. L.
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Kao, C. H.
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Chin, A.
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Liao, C. C.
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電子工程學系及電子研究所
Using a microstrip line layout, a low minimum noise figure (NFmin) of 0.51 dB, at 10 GHZ, was directly measured for 90 nm node NMOSFETs (65 nm physical gate length). The NFmin was located at the peak f(T) of 152 GHz, coinciding with the peak transconductance (g). On the basis of these measurements, a self-consistent model of the DC I-V, S-parameters, and NFmin results was developed, including the changes after hot-carrier stress. (c) 2007 Wiley Periodicals, Inc.
Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate
(2006-07-06)
Chin, A.
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Kao, H. L.
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Kao, C. H.
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Liao, C. C.
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Tseng, Y. Y.
A 14.3% saturation current I-d,(sat) improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying similar to 0.7% tensile strain for 16 finger, 0.13 mu m RF MOSFETs with thin-body (40 mu m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.