Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate

Abstract

A 14.3% saturation current I-d,(sat) improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying similar to 0.7% tensile strain for 16 finger, 0.13 mu m RF MOSFETs with thin-body (40 mu m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations.