標題: | Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate |
作者: | Chin, A. Kao, H. L. Kao, C. H. Liao, C. C. Tseng, Y. Y. Chi, C. C. 奈米科技中心 Center for Nanoscience and Technology |
公開日期: | 6-七月-2006 |
摘要: | A 14.3% saturation current I-d,(sat) improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying similar to 0.7% tensile strain for 16 finger, 0.13 mu m RF MOSFETs with thin-body (40 mu m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations. |
URI: | http://dx.doi.org/10.1049/el:20061035 http://hdl.handle.net/11536/12037 |
ISSN: | 0013-5194 |
DOI: | 10.1049/el:20061035 |
期刊: | ELECTRONICS LETTERS |
Volume: | 42 |
Issue: | 14 |
起始頁: | 827 |
結束頁: | 829 |
顯示於類別: | 期刊論文 |