Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate
| dc.citation.epage | 829 | en_US |
| dc.citation.issue | 14 | en_US |
| dc.citation.spage | 827 | en_US |
| dc.citation.volume | 42 | en_US |
| dc.citation.woscount | 0 | |
| dc.contributor.author | Chin, A. | en_US |
| dc.contributor.author | Kao, H. L. | en_US |
| dc.contributor.author | Kao, C. H. | en_US |
| dc.contributor.author | Liao, C. C. | en_US |
| dc.contributor.author | Tseng, Y. Y. | en_US |
| dc.contributor.author | Chi, C. C. | en_US |
| dc.contributor.department | 奈米科技中心 | zh_TW |
| dc.contributor.department | Center for Nanoscience and Technology | en_US |
| dc.date.accessioned | 2014-12-08T15:16:12Z | |
| dc.date.available | 2014-12-08T15:16:12Z | |
| dc.date.issued | 2006-07-06 | en_US |
| dc.description.abstract | A 14.3% saturation current I-d,(sat) improvement and 0.75 dB minimum noise figure (NFmin) at 10 GHz were measured by applying similar to 0.7% tensile strain for 16 finger, 0.13 mu m RF MOSFETs with thin-body (40 mu m) substrate mounted on plastic. These excellent results for mechanical-strain on DC-RF MOSFETs are better than those of SiN-capped 90 nm strained-Si nMOSFETs and consistent with device simulations. | en_US |
| dc.identifier.doi | 10.1049/el:20061035 | en_US |
| dc.identifier.issn | 0013-5194 | en_US |
| dc.identifier.journal | ELECTRONICS LETTERS | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1049/el:20061035 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12037 | |
| dc.identifier.wosnumber | WOS:000239467500030 | |
| dc.language.iso | en_US | en_US |
| dc.title | Strain enhanced DC-RF performance of 0.13 mu m nMOSFETs on flexible plastic substrate | en_US |
| dc.type | Article | en_US |