Browsing by Author "Kao, Chia-Chun"

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Bottom-Contact n-Channel Organic Thin-Film Transistors with Naphthalene-Based Derivatives
(2009)
Kao, Chia-Chun
;
Lin, Pang
;
Chan, Li-Hsin
;
Lee, Cheng-Chung
;
Ho, Jia-Chong
We investigated bottom-contact organic thin-film transistors based on n-benzyl naphthalene 1,4,5,8-tetracarboxylic diimides. The electrical characteristics were tested in both air and vacuum environments. n-Type semiconductors which are modified by fluorinated imide can be operated in ambient environment. The close packing of the fluorinated ester imide group leads to carrier mobility as high as 1.6x10(-2) cm(2) V(-1) s(-1). The short distance between each molecule can be found via a single-crystal structure.
High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide
(2007-05-21)
Kao, Chia-Chun
;
Lin, Pang
;
Lee, Cheng-Chung
;
Wang, Yi-Kai
;
Ho, Jia-Chong
N,N-bis(4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide was applied to organic semiconductors for bottom-contact thin-film transistors. The carrier mobility was 1.6x10(-2) cm(2) V-1 s(-1), the threshold voltage (V-T) was +5.5 V, and the on/off current ratio was 8.6x10(5). Devices without any further surface treatments were tested in an ambient environment. The threshold voltage shift (Delta V-T) was verified by gate bias stress measurements. A prototype compound, N,N-bis(4-trifluoromethylbenzyl)naphthalene-1,4,5,8-tetracarboxylic di-imide, shows direct correlation to the bottom-contact device with the varied molecular structure. (c) 2007 American Institute of Physics.
Perylenetetracarboxylic di-imide-based bottom-contact devices: A study on two kinds of source/drain electrodes, ITO and MoW
(2009-01-01)
Kao, Chia-Chun
;
Lin, Pang
;
Shen, Yu-Yuan
;
Yan, Jing-Yi
;
Ho, Jia-Chong
High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis(4-trifluoromethoxybenzyl)-perylene-3,4,9,10-tetracarboxylic di-imide, were fabricated, and the effects of crystal packing on indium tin oxide and molybdenum-tungsten alloy were shown in two different electric characteristics. The estimated work function of indium tin oxide and molybdenum-tungsten alloy were 4.7 and 5.0eV. The calculated lowest unoccupied molecular orbital energy level of the organic material was 3.7eV. Transistors with indium tin oxide bottom electrodes exhibited a high mobility of 3.37 x 10(2) cm(2) V(-1) s(1), an on/off current ratio of 6.5 x 10(5) and threshold voltage of-4.0 V. (C) 2008 Elsevier B.V All rights reserved.
Solid-state structure of the naphthalene-based n-type semiconductor, and performance improved with Mo-based source/drain electrodes
(2008-05-01)
Kao, Chia-Chun
;
Lin, Pang
;
Shen, Yu-Yuan
;
Yan, Jing-Yi
;
Ho, Jia-Chong
The synthesis, single-crystal structures, and device performance of novel naphthalene-diimide are described. The crystal structure has revealed the importance of a withdrawing group on solid-state packing. Metal molybdenum use as source/drain (S/D) electrodes can improve the performance of the bottom-contact device. The bottom-contact device based on a material of N,N'-bis (4-trifluoromethoxybenzyl) naphthalene-1,4,5,8-tetracarboxylic acid diimide has a high mobility of 3.58 x 10(-2) cm(2) V-1 s(-1), a threshold voltage of 1.3 V, and an on/off current ratio of 5.2 x 10(5). (c) 2008 Published by Elsevier B.V.