Browsing by Author "Ke, F. K."

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Pressure-induced metallization and resonant Raman scattering in Zn(1-x)Mn(x)Te
(2008-07-01)
Lin, Y. C.
;
Fan, W. C.
;
Chiu, C. H.
;
Ke, F. K.
;
Yang, S. L.
Pressure-induced resonant Raman scattering is adopted to analyze the zone-center optical phonon modes and crystal characteristics of Zn(1-x)Mn(x)Te (0 <= x <= 0.26) thin films. The pressure (Pt) at which the semiconducting undergoes a transition to the metallic phase declines as a function of Mn concentration (x) according to the formula Pt(x)=15.7-25.4x+19.0x(2) (GPa). Pressure-dependent longitudinal and transverse optical phonon frequencies and the calculated mode Gruneisen parameters were adopted to investigate the influence of Mn(2+) ions on the iconicity. The experimental results indicate that the manganese ions tend to increase the iconicity of ZnTe under ambient conditions, whereas an external hydrostatic pressure tends to reduce the iconicity and the bond length of Zn(1-x)Mn(x)Te. (c) 2008 American Institute of Physics.
Time-resolved photoluminescence of isoelectronic traps in ZnSe(1-x)Te(x) semiconductor alloys
(2008-12-15)
Lin, Y. C.
;
Chou, W. C.
;
Fan, W. C.
;
Ku, J. T.
;
Ke, F. K.
Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe(1-x)Te(x). As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.
Time-resolved photoluminescence of isoelectronic traps in ZnSe1-xTex semiconductor alloys
(2008-12-15)
Lin, Y. C.
;
Chou, W. C.
;
Fan, W. C.
;
Ku, J. T.
;
Ke, F. K.
Kohlrausch's stretched exponential law correlates well with the photoluminescence (PL) decay profiles of ZnSe1-xTex. As the Te concentration increases, the stretching exponent beta initially declines and then monotonically increases. This result can be understood using the hopping-transport and energy transfer model. The increase in the number of isoelectronic Te localized traps can reduce the PL decay rate and increase the linewidth, whereas the hybridization of the Te localized states with the valence-band edge states causes a reduction in both the lifetime and linewidth.