Pressure-induced metallization and resonant Raman scattering in Zn(1-x)Mn(x)Te

Abstract

Pressure-induced resonant Raman scattering is adopted to analyze the zone-center optical phonon modes and crystal characteristics of Zn(1-x)Mn(x)Te (0 <= x <= 0.26) thin films. The pressure (Pt) at which the semiconducting undergoes a transition to the metallic phase declines as a function of Mn concentration (x) according to the formula Pt(x)=15.7-25.4x+19.0x(2) (GPa). Pressure-dependent longitudinal and transverse optical phonon frequencies and the calculated mode Gruneisen parameters were adopted to investigate the influence of Mn(2+) ions on the iconicity. The experimental results indicate that the manganese ions tend to increase the iconicity of ZnTe under ambient conditions, whereas an external hydrostatic pressure tends to reduce the iconicity and the bond length of Zn(1-x)Mn(x)Te. (c) 2008 American Institute of Physics.