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Browsing by Author "Ko, CT"

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    MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
    (2006-01-25)
    Chang, YA
    ;
    Chu, JT
    ;
    Ko, CT
    ;
    Kuo, HC
    ;
    Lin, CF
    In0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved.