MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser

In0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved.

Keywords

metalorganic chemical vapor deposition , InGaAs : Sb , semiconductor , laser diodes , optical fiber devices , VCSELs

URI

http://dx.doi.org/10.1016/j.jcrysgro.2005.10.030
https://ir.lib.nycu.edu.tw/handle/11536/12716

Collections

會議論文;;Conferences Paper

Full item page

MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser

Files

Date

Authors

Journal Title

Journal ISSN

Volume Title

Publisher

DOI

Abstract

Description

Keywords

Citation

URI

Collections

Endorsement

Review

Supplemented By

Referenced By