MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser
| dc.citation.epage | 553 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 550 | en_US |
| dc.citation.volume | 287 | en_US |
| dc.contributor.author | Chang, YA | en_US |
| dc.contributor.author | Chu, JT | en_US |
| dc.contributor.author | Ko, CT | en_US |
| dc.contributor.author | Kuo, HC | en_US |
| dc.contributor.author | Lin, CF | en_US |
| dc.contributor.author | Wang, SC | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.date.accessioned | 2014-12-08T15:17:32Z | |
| dc.date.available | 2014-12-08T15:17:32Z | |
| dc.date.issued | 2006-01-25 | en_US |
| dc.description.abstract | In0.45Ga0.55As:Sb/GaAs (1.3 mu m) vertical cavity surface emitting lasers (VCSELs) were grown by metalorganic chemical vapor deposition (MOCVD). A In0.45Ga0.55As:Sb/GaAs quantum well (QW) exhibited an emission wavelength of 1.26 mu m with narrow fullwidth at half-maximum (FWHM) of 35.9meV. For the fabricated VCSEL with 5 mu m diameter oxide-confined aperture, a room-temperature (RT).threshold current of 2.1 mA and an output power of 0.9 mW with 1.3 mu m emission were obtained. The 3 dB modulation frequency was measured to be 7.6 GHz. (c) 2005 Elsevier B.V. All rights reserved. | en_US |
| dc.identifier.doi | 10.1016/j.jcrysgro.2005.10.030 | en_US |
| dc.identifier.issn | 0022-0248 | en_US |
| dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2005.10.030 | en_US |
| dc.identifier.uri | https://ir.lib.nycu.edu.tw/handle/11536/12716 | |
| dc.identifier.wosnumber | WOS:000235071600074 | |
| dc.language.iso | en_US | en_US |
| dc.subject | metalorganic chemical vapor deposition | en_US |
| dc.subject | InGaAs : Sb | en_US |
| dc.subject | semiconductor | en_US |
| dc.subject | laser diodes | en_US |
| dc.subject | optical fiber devices | en_US |
| dc.subject | VCSELs | en_US |
| dc.title | MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laser | en_US |
| dc.type | Article; Proceedings Paper | en_US |