Browsing by Author "Kuan, Chin-I"

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A Novel Three-Dimensional Submicron ZnO Inverter Technology with Refined Contact Design
(2019-01-01)
Lin, Horng-Chih
;
Kuan, Chin-I
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Impact of source/drain contacts on the operation performance of three-dimensional (3-D) zinc-oxide (ZnO) logic inverters is explored in this work. The 3-D inverters consisting of a load vertically stacking on a driver were constructed with the film-profile-engineered (FPE) approach. Use of an ultrathin ZnON contact layer is proposed and demonstrated to be effective in reducing the source/drain (S/D) series resistances (RSD) of the devices. From the material characterization, the improvement in the electrical characteristics is attributed to the suppression of an insulating interfacial oxide layer present at the contact interface which may impede the carrier transport. Measurement results of inverters indicate that the voltage gain can be improved from 9.7 V/V to 13.2 V/V as the scheme is implemented.
High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect Mobility
(2016-03)
Kuan, Chin-I
;
Lin, Horng-Chih
;
Li, Pei-Wen
;
Huang, Tiao-Yuan
;
電子工程學系及電子研究所
In this letter, we demonstrate 0.6-mu m ZnON thin-film transistors (TFTs) with the field-effect mobility of 71 cm(2)/V-sec, which to the best of our knowledge is the highest value ever reported on submicrometer oxide-semiconductor TFTs. The drive current, field-effect mobility, and subthreshold slope of ZnON TFTs are significantly improved as compared with their counterpart ZnO TFTs of the same channel dimensions and structure. Such an improvement in the field-effect mobility primarily results from a considerable reduction in the series source/drain (S/D) resistances because of suppression in an interfacial layer formation between Al S/D pads and the channel layer.
Improving the Performance of ZnO Thin-Film Transistors with ZnON Source/Drain Contacts
(2017-07-01)
Kuan, Chin-I
;
Lin, Horng-Chih
;
Li, Pei-Wen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Motivation to study the ZnO channel for thin-film transistors (TFTs) is strong in light of its decent high mobility and large bandgap, enabling simultaneous coexistence of high on current and low off-state leakage. Nevertheless, the improvement in device performance for ZnO TFTs has not been fully exercised and even the field-effect mobility (mu(FE)) is degraded with downscaling the channel length owing to considerable series source/drain (S/D) resistance (R-SD). In this paper, we show that inserting a thin contact layer of ZnON between the ZnO channel and Al S/D effectively suppresses the formation of interfacial layer of AlOx and thereby reduces R-SD dramatically. This is evidenced by a significant reduction in R-SD from 30.1 to 14.4 k Omega. mu m measured on 0.5-mu m ZnO TFTs with a ZnON contact layer or not, leading to an improvement in mu(FE) from 18.2 to 29.6 cm(2)/V.s.
Short-Channel BEOL ZnON Thin-Film Transistors with Superior Mobility Performance
(2016)
Kuan, Chin-I
;
Lin, Horng-Chih
;
Li, Pei-Wen
;
Huang, Tiao-Yuan
;
電機學院
This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/ V-s were measured from ZnON TFTs with channel lengths of 0.5 m and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip.
Short-Channel ZnON Thin-Film Transistors with Film Profile Engineering
(2016)
Kuan, Chin-I
;
Lin, Horng-Chih
;
Li, Pei-Wen
;
Huang, Tiao-Yuan
;
電機學院
Short-channel zinc oxynitride (ZnON) thin-film transistors (TFTs) were fabricated based on the film profile engineering in combination with e-beam lithographical patterning. ZnON films were deposited using reactive magnetron sputtering in N-2/O-2 ambient and exhibit a Hall mobility of 95 cm(2)/V-s. A ZnON TFT with channel length of 147nm shows high on/off current ratio of 5x10(7) and field-effect mobility of 9.1 cm(2)/Vs, which are superior or comparable to their counterparts of IGZO or ZnO TFTs.
Study of the Long-Term Electrical Stability of InGaZnO 3-D Film-Profile-Engineered Inverters
(2018-01-01)
Kuan, Chin-I
;
Lin, Horng-Chih
;
Li, Pei-Wen
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
IGZO 3-D film-profile-engineered (FPE) inverters were fabricated and characterized. The unipolar load and driver thin-film transistors (TFTs) were stacked vertically not only for the sake of saving footprint, but also for the flexibility of threshold voltage adjustment by the lengths of suspended hardmask. The proposed 3-1) inverters demonstrate full-swing switching with a voltage gain as high as 13.6 V/V at an operating voltage of 5 V. The long-term stability was investigated in terms of the voltage gain, transconductance (gm) and threshold voltage (Vth) shift. Following 4 months, degradation in the voltage gain of the inverter in company of reduced gm and positive Vth shift for the drive TFT is attributed to the outgassing of hydrogen.
ZnON Contacts Enabling High-performance 3-D InGaZnO Inverters
(2018-01-01)
Kuan, Chin-I
;
Peng, Kang-Ping
;
Lin, Horng-Chih
;
Li, Pei-Wen
;
電子工程學系及電子研究所
The inclusion of an ultra-thin zinc oxynitride (ZnON) layer inserted between the channel of InGaZnO (IGZO) and source/drain (S/D) metal of Al for an IGZO thin-film transistor (TFT) is demonstrated to improve device performance in terms of a reduction in S/D series resistance (RSD). The improvement is attributable to the elimination of an interfacial layer of AlOx which is inherently formed at the Al/IGZO interface, by the insertion of ZnON. Characteristics of 3D stacked-type inverters constructed by the IGZO TFTs with ZnON contacts have been also studied. Full-swing switching with voltage gains increases from 9.8V/V for the IGZO inverter without ZnON contacts to 12.3 V/V with ZnON contacts at an operating voltage of 5 V.