Short-Channel BEOL ZnON Thin-Film Transistors with Superior Mobility Performance

Abstract

This work reports the first experimental submicron and sub-100 nm ZnON TFTs with excellent performance. Field-effect mobility values as high as 55 and 9.2 cm2/ V-s were measured from ZnON TFTs with channel lengths of 0.5 m and 75 nm, respectively. Those are the highest values ever reported on oxide-semiconductor TFTs of comparable channel length. The results confirm ZnON TFTs as an effective building block for the construction of BEOL circuits integrated in a chip.