Browsing by Author "Kuan, JF"

Now showing 1 - 3 of 3

A macro model of silicon spiral inductor
(2002-05-01)
Su, CY
;
Chen, LP
;
Chang, SJ
;
Tseng, BM
;
Lin, DC
A new automatic parameter extraction method for modeling Of silicon Spiral inductors is presented. The Concepts on self-resonance frequency (f(sr)) and quality factor of a spiral inductor are utilized to develop the concise extraction procedures. In the mean time, the presented extraction procedures are programmed as a macro to execute all the extractions automatically and shorten the extraction time effectively. Without any additional optimization or curve fitting, almost all the patterns of S-parameters between the measured and the simulation of extracted data implemented with the extraction macro are less than 5%. The programmed extraction macro makes it fast and accurate to extract and characterize the behaviours or silicon-based spiral inductors with different structures and substrate resistivities. It provides a concrete foundation commercial silicon radiofrequency (RF) Circuit design to realizing on-chip silicon RF integrated circuits. Furthermore, the directly extracted equivalent model parameters, without an optimization, also provide a rule to fairly, effectively and phsically judge the performance of a spiral inductor. (C) 2002 Elsevier Science Ltd. All rights reserved.
An automatic macro program for radio frequency MOSFET characteristics analysis
(2001-10-01)
Su, CY
;
Chang, SJ
;
Chen, LP
;
Ho, YP
;
Huang, GW
The parameter extraction language (PEL) in Agilent IC-CAP software is used to develop an automatic macro program for the analysis of the characteristics of RF MOSFETs. By using this powerful macro program, the time spent on the measurement of the MOSFET characteristics and the related analysis is effectively reduced. This macro program permits a fast and accurate method to obtain the DC and RF characteristics of MOSFETs with different device geometries and operating conditions. It is also suitable for high volume measurements and analyses of MOSFET, and provides a solid jou 71 dation for RF circuit design.
Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs
(2000-07-20)
Su, CY
;
Chen, LP
;
Chang, SJ
;
Huang, GW
;
Ho, YP
The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterising the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.