Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs

Abstract

The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterising the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.