Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs

標題:	Effect of coplanar probe pad design on noise figures of 0.35 mu m MOSFETs
作者:	Su, CY Chen, LP Chang, SJ Huang, GW Ho, YP Tseng, BM Lin, DC Lee, HY Kuan, JF Deng, YM Chen, CL Leu, LY Wen, KA Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	20-七月-2000
摘要:	The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterising the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours.
URI:	http://dx.doi.org/10.1049/el:20000904 http://hdl.handle.net/11536/30383
ISSN:	0013-5194
DOI:	10.1049/el:20000904
期刊:	ELECTRONICS LETTERS
Volume:	36
Issue:	15
起始頁:	1280
結束頁:	1281
顯示於類別：	期刊論文

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